For intrinsic oxide semiconductors, oxygen vacancies served as the electron donors have long been, and inevitably still are, attributed as the primary cause of conductivity, making oxide semiconductors seem hard to act as high insulating materials. Meanwhile, the presence of oxygen vacancies often leads to a persistent photoconductivity phenomenon which is not conducive to the practical use in ...

Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer delta doping of interstitial Mn (Mn(int)) are half-metallic. For Mn(int) concentrations of 1/2 or 1 layer, the states induced in the band gap of delta-doped heterostructures still display high spin polarization, about 85% and 60%, respectively. The proposed hetero...

The jump frequency of Cd tracer atoms in pure and Al-doped β-Mn was determined from measurements of quadrupole relaxation using the method of perturbed angular correlation of gamma rays. The jump frequency of Cd in β-Mn containing about 4.5 at.% Al had an activation enthalpy of 0.67(3) eV. In pure β-Mn at 950 K, the jump frequency was a factor about 8 larger than the value of 9.2 MHz in the all...

Results of density-functional calculations for isolated transition metal (TM = V, Cr, Mn, Fe, Co, Ni on cation sites) doped GaN demonstrate a novel magnetic metastability in dilute magnetic semiconductors. In addition to the expected high spin ground states (4muB/Mn and 5muB/Fe), there are also metastable low spin states (0muB/Mn and 1muB/Fe)--a phenomenon that can be explained in simple terms ...

Mn doped ZnO nanocomposite thin film coated on glass by a simple spin-coating method was used to degrade an azo textile dye from aqueous environment. Mn doped ZnO nanocomposite thin film was characterized by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The photo-reduction activity of photocatalyst was evaluated using an azo textile dye as organic contaminant irradiat...

The structural, magnetic, and electronic properties of dilute Mn-doped scandium nitride thin films grown by radio frequency N-plasma molecular beam epitaxy are explored. The results indicate a small magnetization extending up to as high as 350K. There is a slight dependence on the manganese concentration, with the lower Mn concentration showing a larger saturation magnetization.

This article reports on optical properties of Mn 2+ (0.5 mol%): 49.5 B2O3 10PbO 30CdO -10AlF3 glasses. Optical absorption spectrum of the manganese ions doped glass exhibits broad absorption band at 473 nm. Photoluminescence spectrum of Mn 2+ (0.5 mol %): 49.5B2O330CdO – 10PbO 10AlF3 glass has revealed a red emission at 618 nm with an excitation wavelength 467 nm.