We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In3Sb1Te2 (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320 °C, with sheet resistances of ~10 kΩ(sq) (amorphous), ~0.2 kΩ(sq) (first phase-change), and ~10 Ω(sq) (second phase-change). MIST did not exhibit any chemical separation or increas...

In this paper, Al-doped ZnO thin film transistors (AZO-TFT) were fabricated by the thermal evaporation growth of AZO channel layer on a silicon substrate at temperatures below 250°C. A SiO2 dielectric layer grown by the horizontal furnace was used as a gate. An active layer thickness of 10nm was measured by Atomic Force Microscopy (AFM), and its surface had root mean square (rms) roughness 12.6...

In DMS materials, a small fraction of a host semiconductor cation is substituted by magnetic ions. We chose as semiconducting host the transparent ZnO, with a bandgap of 3.3 eV at room temperature. Studies on ZnO doped with 3d transition metals indicated only small magnetic moments. The more recent results for Gd in GaN, indicating high magnetic moments, motivated us to investigate ZnO thin fil...

Investigation of new calculate depends on the controlled optical properties of nanomaterials. Understanding the growth mechanism and growth parameters of nanostructured materials is essential. ZnO is one of the most important semiconductor materials for its semiconducting characteristics. In the present paper, we investigated a new model by theoretical methods; it is based on correlation from t...

A simple and versatile approach has been developed to synthesize multi-walled carbon nanotubes/metal-doped ZnO nanohybrid materials (MWNT/M-doped ZnO) by means of the co-deposition method. The experimental results illuminate that MWNTs can be modified by metal-doped ZnO nanoparticles at 450 °C, such as Mn, Mg, and Co elements. Furthermore, the MWNT/Mg-doped ZnO hybrids have been proven to have ...

Undoped and Mn-doped ZnO nanoparticles were successfully prepared by the hydrothermal method with different annealing temperature conditions. Structural, chemical and optical properties of the samples were studied by X-ray diffraction (XRD), Field Emission scanning electron microscopy (FESEM), UV-Vis spectrophotometry and Fourier transform infrared (FT-IR) spectroscopy. The phase purity was con...

ZnO is an important II-VI semiconductor material for devices with possible applications such as piezoelectric transducers, gas sensors, transparent electronic in solar cell, saw devices. Based on known research, ZnO is the most promising in optoelectronic and optical applications, especially in UV region. An understanding of the optical properties of ZnO thin film on different substrates is als...

Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film ...

Undoped and Mn-doped ZnO nanoparticles were successfully prepared by the hydrothermal method with different annealing temperature conditions. Structural, chemical and optical properties of the samples were studied by X-ray diffraction (XRD), Field Emission scanning electron microscopy (FESEM), UV-Vis spectrophotometry and Fourier transform infrared (FT-IR) spectroscopy. The phase purity was con...