نتایج جستجو برای: mo doped
تعداد نتایج: 79081 فیلتر نتایج به سال:
We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spec...
BACKGROUND Ascorbic acid is one of the most important vitamins to monitor in dietary sources (juices and vitamins) and biological liquids. RESULTS Silica and silica-titania xerogels doped with Mo,P-heteropoly compounds (HPC) have been synthesized varying titanium(IV) and HPC content in sol. Their surface area and porosity have been studied with nitrogen adsorption and scanning electron micros...
PECVD growth of Six:Ge1-x films for high speed devices and MEMS SiGe thin films were deposited by plasma enhanced chemical vapor deposition (PECVD; MV Systems, Colorado) for use in high speed devices, Micro-Electrical Mechanical Systems (MEMS) and measurement of electromagnetic radiation (bolomtery). SiGe films grown by PECVD typically have lower stress, lower deposition temperatures and high g...
Abstract Fe-doped ZnO nanoparticles (NPs) with different Fe contents (0.1–5.0 wt%) were prepared using extract of wild olive leaves growing in Saudi Arabia (region Abha). The biosynthesized NPs characterized by Fourier transform infrared spectroscopy, X-ray diffraction, Brunauer–Emmett–Teller, scanning electron microscopy, transmission and photoluminescence (PL). Characterization results showed...
We report the growth and characterization of single-crystalline Sn-doped In2O3 (ITO) and Mo-doped In2O3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance transparent metallic conductors with transmit...
Doping MoS2 with Re is known to alter the electronic, structural, and tribological properties. Re-doped has been previously mainly studied in monolayer or few-layer form but can also be relevant for applications many-layer bulk form. In this work, we use density functional theory explore structure, phase stability, Raman spectrum of MoS2. We consider possibility dopant existing at different loc...
The absence of a direct-to-indirect band gap transition in ReS2 when going from the monolayer to bulk makes it special among the other semiconducting transition metal dichalcogenides. The functionalization of this promising layered material emerges as a necessity for the next generation technological applications. Here, the structural, electronic, and magnetic properties of substitutionally dop...
Using first-principles calculations, we have investigated the electronic structure and magnetic properties of Fe-X6 clusters (X = S, C, N, O, and F) incorporated in 4 × 4 monolayer MoS2, where a Mo atom is substituted by Fe and its nearest S atoms are substituted by C, N, O, and F. Single Fe and Fe-F6 substituions make the system display half-metallic properties, Fe-C6 and Fe-N6 substitutions l...
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