A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...

InGaN epilayers with different indium concentrations have been grown on 100-nm-thick AlN/n-Si(111) template using plasma assisted molecular beam epitaxy.

Nanoscale phase separation in Fe304(l 11) films on sapphire(0001) and phase stability of Fe304(001) films on MgO(001) grown by oxygen-plasma-assisted molecular beam epitaxy We report a phase instability in oxygen-plasma-assisted molecular beam epitaxy of Fe304 films on sapphire (0001) substrates. Under a wide range of growth conditions, Fe304 (111) films phase separate, on a nanometer length sc...

We have grown Bi12xSbx alloy thin films on CdTe(111)B over a wide range of Sb concentrations (0<x <0.183) using molecular-beam epitaxy. Temperature-dependent electrical resistivity ~r! and thermoelectric power ~S! were studied. We have observed several differences over the bulk system. The 3.5 and 5.1% Sb alloys show semiconducting behavior, and the Sb concentration with maximum band gap shifte...

High-Resolution Electron-Energy-Loss Spectroscopy (HREELS) has been applied to investigate the anisotropy of the GaAs(001)-c(4 £ 4) and b2(2 £ 4) reconstructions. Measurements have been performed on high-quality samples grown in situ by Molecular Beam Epitaxy. The loss intensity is different in the directions parallel and perpendicular to dimers, particularly close to the fundamental gap. We co...

Nano-sized Ag(111) islands were first prepared by using molecular beam epitaxy technique on dilutedhydrofluoric acid etched Si(111) substrate. Epitaxial Co films were then grown onto the Ag films at 100 °C to decrease interdiffusion. The Ag buffer layer designed to form isolated islands with {111} sidewalls on the Si(111) substrate, and provided Co films (111) texture growth to study the correl...