A behavioral model in PSpice for a silicon carbide (SiC) power MOSFET rated at 1200V / 33A for a wide temperature range is developed by extracting the device parameters from the data sheet. The static and dynamic behavior of the SiC power MOSFET is simulated and compared with the device characteristics to validate the accuracy of the PSpice model. The temperature dependent behavior of the MOSFE...

Power MOSFETs require a gate drive circuit to translate the on/off signals from an analog or digital controller into the power signals necessary to control the MOSFET. This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential driver solutions including d...

In this paper, we apply our proposed computing algorithm for numerical solution of semiconductor device energy balance equation in carrier temperature simulation. This robust simulation based on finite volume discertization scheme and monotone iterative algorithm is successfully developed and implemented for intrinsic investigation of submicron MOSFET device. Simulation results demonstrate MOSF...

We demonstrated soldering of an electrical component (the metal-oxide semiconductor field effect transistor (MOSFET)) on a printed circuit bord (PCB) via solder paste heated by microwave irradiation. The behavior the object soldered with in magnetic and electric were evaluated using various resonators. In field, was selectively confirmed that MOSFET connected onto PCB without any damage operate...

In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated same design rules and process platform. Therefore, have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), threshold (Vth), body diode forward (VSD). It is shown that Ciss/Coss/Crss capacita...

The accuracy of a MOSFET dosimetry system with respect to peripheral therapeutic doses from high-energy X-rays has been evaluated. The results have been compared with ionisation chamber measurements in the same peripheral regions of the beam. For 6 MV and 18 MV X-ray beams, the MOSFET system in the high-sensitivity mode produces reproducibility of dose measurement with relative standard deviati...

VHDL-AMS (IEEE 1076.1-1999), an extension to the VHDL, is considered to be a unified language for digital analog, mixed-signal modeling [1],[2]. Although traditionally AMS language is commonly used for behavioral modeling, in this paper special emphasis is given to modeling of mosfet based devices at switch level. We have analyzed VHDL-AMS for switch level modeling on basis of accuracy and resp...

Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities to SEB, SEGR, and microdose. There ha...

The split-C(V) technique has served during three decades for independent extraction of the inversion and accumulation charge in MOSFETs from the direct measurement of the gate-to-channel capacitance [1]. The total charge, Q, obtained from the integration of the gateto-channel capacitance curves, can be used for the evaluation of the carrier mobility using the standard MOSFET equations (μ α ID/Q...

The key to successfully applying the SiC MOSFET requires an understanding of the device’s unique operating characteristics. In this section, the characteristics of Cree’s 1200V 80mΩ SiC MOSFET (CMF20120D) will be discussed. Comparisons will be made with other similar silicon devices along with application implications. The intention of this comparison is to illustrate the differences in operati...