We aim at constructing a common platform for compact model development based on the Verilog-A language for collaboration among different research groups. The project aims in particular at a framework for efficient development of multi-gate MOSFET models for circuit simulation. We have developed several prototypes of multi-gate MOSFET models based on different concepts till now. Phenomena expect...

A simple analytical model to predict the DC MOSFET behavior under electromagnetic interference (EMI) is presented. The model is able to describe the MOSFET performance in the linear and saturation regions under EMI disturbance applied to the gate. The model consists of a unique simple equivalent circuit based on a voltage dependent current source and a reduced number of parameters which can acc...

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...

............................................................................................................................... VERSION ABREGEE ............................................................................................................... INTRODUCTION....................................................................................................................1 CHAPTER I M...

Organized by Working Group 6 “Computational Dosimetry” of the European Radiation Dosimetry (EURADOS), a group intercomparison exercises was conducted in which participants were asked to solve predefined problems computational dosimetry. The results these comparisons published series articles this virtual special issue Measurements. This paper reviews experience gained from various and highlight...

The SOI MOSFET technique is used to overcome the scaling effects. In this work, 20nm SOI MOSFET using Poly silicon as gate material of both Ntype and P-type were designed. The same SOI MOSFET is designed using Molybdenum as gate material for both N-type and P-type and the device characteristics werecompared and analysed.

Page Abstract ............................................................................................................2 Introduction ......................................................................................................2 Key MOSFET Electrical Parameters in Class D Audio Amplifiers ....................2 Drain Source Breakdown Voltage BVDSS........................................

in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...

The enhancement-mode MOSFET is the primary active device used in present-day digital and mixed-signal integrated circuit processes. Thus, it is important to introduce this device and associated circuit design methods early in the electronics curriculum. This article discusses four integrated circuit MOSFET amplifier configurations; the current source/active load stage, the source follower, the ...