Q: What is CMOL? A: The basic idea of hybrid CMOS/nanoelectronic circuits is to complement the CMOS stack with a few-layer nanoelectronic addon (Fig. 1a) in the form of a nanowire crossbar (Fig. 1b). This idea may be traced back at least to the pioneering paper by J. Heath et al. [1]; however, the authors of that work and several following works in which this concept has been developed (see, e....

Resonant tunneling diodes (RTDs) have intriguing properties which make them a primary nanoelectronic device for both analog and digital applications. We propose a bistable RTD-based cell for the cellular neural network (CNN) which exhibits superior performance in terms of circuit complexity, and processing speed compared to standard cells.

microscopy-based techniques is enabling new ways to build and investigate nanoscale electronic devices. Here we review several advanced techniques to characterize and manipulate nanoelectronic devices using an atomic force microscope (AFM). Starting from a carbon nanotube (CNT) network device that is fabricated by conventional photolithography (micron-scale resolution) individual carbon nanotub...

Graphene, a single-atom-thick and two-dimensional carbon material, has attracted great attention recently. Because of its unique electrical, physical, and optical properties, graphene has great potential to be a novel alternative to carbon nanotubes in biosensing. We demonstrate the use of large-sized CVD grown graphene films configured as field-effect transistors for real-time biomolecular sen...

Hybrid “CMOL” integrated circuits, incorporating advanced CMOS devices for neural cell bodies, nanowires as axons and dendrites, and singlemolecule latching switches as synapses, may be used for the hardware implementation of extremely dense (~10 cells and ~10 synapses per cm) neuromorphic networks, operating up to 10 times faster than their biological prototypes. We are exploring several “Cros...

Hybrid “CMOL” integrated circuits, combining CMOS subsystem with nanowire crossbars and simple two-terminal nanodevices, promise to extend the exponential Moore-Law development of microelectronics into the sub-10-nm range. We are developing neuromorphic network (“CrossNet”) architectures for this future technology, in which neural cell bodies are implemented in CMOS, nanowires are used as axons...

As device features near atomic dimensions, simulations of electrical currents need to be based on a quantummechanical description of the system rather than a classical one. New phenomena appear which can be exploited for novel device characteristics, but also fundamental challenges arise when the influence of single defects can have devastating effects. From a metrological perspective, the very...

As CMOS technology enters the nanoelectronics realm (tens of nanometres and below), where quantum mechanical effects start to prevail, conventional CMOS devices are meeting many technological challenges for further scaling. This situation has motivated the emergence of a variety of new nanoelectronic devices [1] [2]. However, as new generations of nanodevices are developed, we become less famil...

An overview of models used for the simulation of current transport in nanoelectronic devices within the framework of TCAD applications is presented. Modern enhancements of semiclassical transport models based on microscopic theories as well as quantum mechanical methods used to describe coherent and dissipative quantum transport are specifically addressed. This comprises the incorporation of qu...

The development of three-dimensional (3D) synthetic biomaterials as structural and bioactive scaffolds is central to fields ranging from cellular biophysics to regenerative medicine. As of yet, these scaffolds cannot electrically probe the physicochemical and biological microenvironments throughout their 3D and macroporous interior, although this capability could have a marked impact in both el...