In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-le...

in this paper, the electrochemical behaviour of passive films formed on aisi 321 stainless steel (aisi 321)immersed in 0.1 m naoh + 0.1 m koh solution was evaluated by different electrochemical techniques. forthis purpose, passive films were formed at open circuit potential for 1 to 12 hours and then electrochemicalmeasurements were done. the polarization curves suggested that aisi 321 showed e...

copper thin films with nano-scale structure have numerous applications in modern technology.  in this work, cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by dc magnetron sputtering technique at room temperature in pure ar gas. the sputtering time was considered in 4, 8, 12 and 16 min, respectively. the thickness effect on the structural, morpholo...

Following a brief historical overview on the origin and the evolution of Schottky noise we discuss applications in the field of beam diagnostics in particle accelerators. A very important aspect of Schottky diagnostics is the fact that it is a non perturbing method. Essentially statistics based, it permits to extract beam relevant information from rms (root mean square) noise related to the mov...

Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...

Rev. Introduction Since the introduction of commercial silicon carbide (SiC) Schottky diodes over 10 years ago, significant improvements in power factor correction (PFC) circuits and motor drives have been realized due to the elimination of minority carrier reverse recovery charge and its resulting switching loss associated with traditional PiN diodes. The early adoption of SiC Schottky diodes ...

A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].

based on citation analysis, this work describes the growth and interdisciplinary patterns of nanoscale research in iran. it covers all the iranian isi papers on nanoscience and nanotechnology indexed in the isi databases in 2008 and surveys the corresponding data from the beginning to 2007. moreover, in an international context, a brief comparison is made between our data and those of other cou...

In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing focused ion beam FIB induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with NH3 and had diameters ranging from 100 nm to 250 nm and lengths up to 200 m. As-grown nanowires were dispersed on SiO2 coated p++ Si substrate. A 30 ke...