نتایج جستجو برای: nanowire length

تعداد نتایج: 316115  

J. Davoodi M. Ahmadi

The mechanical properties including elastic stiffness constants as well as bulk modulus of Palladium (Pd) nanowire were calculated in the constant temperature and pressure (NPT), ensemble by molecular dynamics (MD) simulation technique. The quantum Sutton-Chen (Q-SC) many-body potential was used to calculate the cohesive energy as well as forces experience by every atoms. The temperature and pr...

2014
Pi-Ju Cheng Chih-Kai Chiang Yi-Cheng Chung Chung-Hao Tien Tzy-Rong Lin

We theoretically analyze nanowire-based hybrid plasmonic nanocavities on thin substrates at visible wavelengths. In the presence of thin suspended substrates, the hybrid plasmonic modes, formed by the coupling between a metal nanowire and a dielectric nanowire with optical gain, exhibit negligible substrate-mediated characteristics and overlap better with the gain region. Consequently, the conf...

2014
Ki-Young Lee Ilsoo Kim So-Eun Kim Du-Won Jeong Ju-Jin Kim Hyewhon Rhim Jae-Pyeong Ahn Seung-Han Park Heon-Jin Choi

The single living cell action potential was measured in an intracellular mode by using a vertical nanoelectrode. For intracellular interfacing, Si nanowires were vertically grown in a controlled manner, and optimum conditions, such as diameter, length, and nanowire density, were determined by culturing cells on the nanowires. Vertical nanowire probes were then fabricated with a complimentary me...

2011
Ju Xu Lan Chen Alan Mathewson Kafil M Razeeb

Ultra-long metal nanowire arrays with large circular area up to 25 mm in diameter were obtained by direct electrodeposition on metalized Si and glass substrates via a template-based method. Nanowires with uniform length up to 30 μm were obtained. Combining this deposition process with lithography technology, micrometre-sized patterned metal nanowire array pads were successfully fabricated on a ...

Journal: :Nanotechnology 2015
Hadi Hosseinzadeh Khaligh Irene A Goldthorpe

The growth of AgCl nanocubes directly on the sidewalls of Ag nanowires is demonstrated. The nanocubes can be simply obtained through extended low temperature annealing of polyol-synthesized silver nanowires in a vacuum. The length of time and temperature of the anneal and the diameter of the nanowire affect the size and density of the nanocubes obtained. It is hypothesized that the AgCl materia...

2005
Fa-Liang Cheng Ming-Liang Zhang Hong Wang

Large area highly uniform and ordered polypyrrole nanowire and nanotube arrays were fabricated by chemical oxidation polymerization with the help of a porous anodic aluminium oxide (AAO) template. Under 0.2 moL/L pyrrole (H2O) and 0.2 moL/L FeCl3 (H2O) pattern, polypyrrole nanowire arrays were obtained after 2.0 hours polymerization reaction in a two-compartment reaction cell. When the reaction...

Journal: :Physical review letters 2004
Zhian He David J Smith P A Bennett

We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width...

Journal: :Nano letters 2006
Samuel Hoffmann Ivo Utke Benedikt Moser Johann Michler Silke H Christiansen Volker Schmidt Stephan Senz Peter Werner Ulrich Gösele Christophe Ballif

The fracture strength of silicon nanowires grown on a [111] silicon substrate by the vapor-liquid-solid process was measured. The nanowires, with diameters between 100 and 200 nm and a typical length of 2 microm, were subjected to bending tests using an atomic force microscopy setup inside a scanning electron microscope. The average strength calculated from the maximum nanowire deflection befor...

2013
N. Clément X. L. Han G. Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial ...

1997
Yukihito Kondo Kunio Takayanagi

We formed gold nanowires using electron-beam irradiation in an ultrahigh vacuum electron microscope. The dimensions of these nanowires were 0.8–3 nm in thickness and 5–10 nm in length. The nanowires showed lasting stability. We propose a structure model for a nanowire with a thickness of 2 nm. The model is represented by a hexagonal prism; the surface layer of the prism has a hexagonalclose-pac...

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