We consider light absorption in a germanium grating placed on top of photonic-crystalline substrate. Such system supports an optical Tamm state decoupled from the continuous spectrum with its frequency within photonic band gap. have demonstrated that application makes possible to engineer extremely narrow absorber which provides 100% semiconductor critical coupling regime. The proposed design m...

Narrow-band-gap III–V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer more severe corrosion by the electrolyte solution than thin-film counterparts. Thus, short-term durability is major obstacle using these NWs practical appl...

Abstract: In this study, using density functional theory and the SIESTA computationalcode, we investigate the electronic and optical properties of the armchair graphenenanoribbons and the armchair boron nitride nanoribbons of width 25 in the presence of atransverse external electric field. We have observed that in the absence of the electricfield, these structures are se...

Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED) principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the...

Introducing intermediate band(s) within the energy gap of the semiconductor could possibly increase efficiencies of solar cells. Photons with energy less than the band gap can contribute to the device output by using the intermediate band(s) as a ‘ladder’ to the conduction band. The present analysis shows the maximum efficiency an ideal solar cell containing one and two intermediate bands can a...

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gaple...

We report the synthesis and characterization of a Si-based ternary semiconductor Mg$_3$Si$_2$Te$_6$, which exhibits quasi-two-dimensional structure, where trigonal Mg$_2$Si$_2$Te$_6$ layers are separated by Mg ions. Ultraviolet-visible absorption spectroscopy density functional theory calculations were performed to investigate electronic structure. The experimentally determined direct band gap ...

Heterostructures of dissimilar 2D materials are potential building blocks for novel materials and may enable the formation of new (photo)electronic device architectures. Previous work mainly focused on supporting graphene on insulating wide-band gap materials, such as hex-BN and mica. Here we investigate the interface between zero-band gap semiconductor graphene and band-gap semiconductor MoS2 ...

We analyze the structures emerging in the spacetime representation of the probability density woven by a slightly relativistic particle caught in a one-dimensional box. In particular, we evaluate the relativistic effects on the revival time and the specific changes produced in the intermode traces, which quantum carpets consist of. Moreover, we present a detailed mathematical analysis of such q...