This paper presents an analysis of the motion of an neutral impurity species in a nanometer scale 4He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity–He potentials, such as those of SF6 and OCS, the impurity is kept well away of the the surface of the cluster by long range induction and dispersion interactions with He, bu...

This paper presents an analysis of the motion of an neutral impurity species in a nanometer scale 4He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity–He potentials, such as those of SF6 and OCS, the impurity is kept well away of the the surface of the cluster by long range induction and dispersion interactions with He, bu...

This paper presents an analysis of the motion of a neutral impurity species in a nanometre scale He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity± He potentials, such as those of SF6 and OCS, the impurity is kept well away from the surface of the cluster by long range induction and dispersion interactions with He, but t...

Point defects in epitaxial GaN and ZnSe semiconductor layers have been studied using a low-energy positron beam. Ga vacancies are found to be present in n-type GaN grown by metal organic chemical vapor deposition, where the conductivity is due to residual oxygen. When n-type silicon impurity doping is done, clearly less vacancies are observed. In Mgdoped p-type and semi-insulating materials the...

Using an asymptotic solution of the M -impurity thermodynamics of a dilute s-d system, the impurity energy and impurity heat capacity ∆C(T ) are derived for dilute magnetic alloys with spin 1/2 and spin 3/2 impurities. The parameters which enter ∆C are adjusted to fit experimental data on impurity heat capacity of CuCr and (La1−xCex) Al2. Agreement is satisfactory for CuCr, at temperatures belo...

The e ects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied by positron annihilation spectroscopy. It is shown that vacancy defects are formed in Ga or N sublattices depending on the doping of the material. Vacancies are decorated with impurity atoms leading to the compensation of the free carriers of the sam...

A simple analytical formula for the impurity seeded partially detached divertor operational point has been developed using 1D modelling. The inclusion of charge exchange momentum loss terms improves the 1D modelling for ASDEX Upgrade conditions and its extrapolation to larger devices. The investigations are concentrated around a partially detached divertor working point of low heat flux and an ...

in this paper, the electronic eigenstates and energy spectra of single and two-interacting electrons confined in a concentric double quantum rings with a perpendicular magnetic field in the presence of         on-center donor and acceptor impurities are calculated using the exact diagonalization method. for a single electron case, the binding energy of on-center donor and acceptor impurities ar...

A sensitive and stable High Performance liquid chromatographic method has been developed for the identification of three process related impurities viz impurity-A, impurity-B and impurity-C in Dapoxetine hydrochloride. The method was optimized based on the peak shape and resolution of impurity-A, impurity-B and impurity-C. Phenomenex Luna C18 column (250mm×4.6 mm, 5um) was used for optimization...

Local magnetic properties around a nonmagnetic impurity are investigated in high-Tc cuprate superconductors. We consider a model two-dimensional dx2−y2-wave superconductor with strong antiferromagnetic (AF) spin fluctuations and calculate the spin susceptibility around the impurity. We show that the uniform susceptibility (χ(0)), which is usually suppressed in spin-singlet superconductivity, is...