In this study the microstructure of alcohol binary mixtures (toluene and cyclohexane) is investigated from molecular dynamics simulations. case cyclohexane mixtures, we show that strong deviation ideality result formation nanophases molecules gathered in aggregates hydrogen bonds leading to spatial heterogeneity. Nanophases disappear as alkyl chain size increases because hydrophobic interaction...

The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0–2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor 2 was obtained. It elucidates that a ZnO–Si p-n junction can b...

We have included Shockley-Read-Hall (SRH) generation/recombination in Non-equilibrium Green’s function (NEGF) calculations via a multiphonon relaxation model. The model has been used to study how the presence of defects affects current–voltage characteristics GaAs p-i-n diodes, and an InGaAs tunnel diode. Regarding we show that SRH is responsible for ideality factors approaching theoretical val...

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height ( ), ideali...

Polycrystalline Bi films were deposited onto p-GaAs~100! by electrochemical deposition. Annealing resulted in the formation of large grains with a preferred @012# orientation. The p-GaAs/Bi junctions were rectifying and the barrier height and ideality factor decreased with increasing film thickness. For films greater than 0.5 mm in thickness, the barrier height was about 0.56 eV and the idealit...

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that th...

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by curre...

The current-voltage characteristics for Au/n-Si Schottky diode are generated by simulation. The simulation performed using Newton-Raphson iteration method yields current-voltage characteristics over wide temperature range. The data is analyzed using TDE-mechanism to study the temperature dependence of barrier height and ideality factor. Results obtained from simulation studies show the barrier ...

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...

The forward and reverse bias I–V, C–V, and G/x–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al0.22Ga0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiNx insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiNx) on the main electrical parameters such as the ideality factor (n), zero-bias barr...