نتایج جستجو برای: organic light emitting diode

تعداد نتایج: 609814  

Journal: :Advanced materials 2013
Georgios Tsiminis Yue Wang Alexander L Kanibolotsky Anto R Inigo Peter J Skabara Ifor D W Samuel Graham A Turnbull

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabri...

Journal: :Advanced materials 2011
Sunkook Kim Hyuk-Jun Kwon Sunghun Lee Hongshik Shim Youngtea Chun Woong Choi Jinho Kwack Dongwon Han MyoungSeop Song Sungchul Kim Saeed Mohammadi Inseo Kee Sang Yoon Lee

Journal: :Optics express 2008
Sang-Hwan Cho Young-Woo Song Joon-gu Lee Yoon-Chang Kim Jong Hyuk Lee Jaeheung Ha Jong-Suk Oh So Young Lee Sun Young Lee Kyu Hwan Hwang Dong-Sik Zang Yong-Hee Lee

We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%,...

2005
Chih-Wei Chu Chieh-Wei Chen Sheng-Han Li Yang Yang

A high-performance organic active matrix pixel was fabricated by using a metal oxide sV2O5d coupling layer that effectively integrates an organic light-emitting diode sOLEDd on top of an organic field-effect transistor sOFETd. The field-effect mobility of the OFET approached 0.5 cm2 V−1 s−1 and the ON/OFF current ratio was .103. The brightness of the OLED was on the order of 2000 cd/m2, with an...

Journal: :Physical review letters 2010
Patrik Recher Yuli V Nazarov Leo P Kouwenhoven

We consider an optical quantum dot where an electron level and a hole level are coupled to respective superconducting leads. We find that electrons and holes recombine producing photons at discrete energies as well as a continuous tail. Further, the spectral lines directly probe the induced superconducting correlations on the dot. At energies close to the applied bias voltage eV(sd), a paramete...

2014
Andre F. S. Guedes Vilmar P. Guedes Simone Tartari Mônica L. Souza Idaulo J. Cunha Alan J. Heeger

The development of Organic Light Emitting Diode (OLED), using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene), PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible...

2000
C. F. Madigan J. C. Sturm

The emission intensity of an organic light-emitting diode at normal viewing angle and the total external emission efficiency have been increased by factors of 9.6 and 3.0, respectively, by applying spherically shaped patterns to the back of the device substrate. The technique captures light previously lost to waveguiding in the substrate and, with proper choice of substrate, light previously lo...

Journal: :Optics letters 2012
Feifei Wei Yin Wan O Guixin Li Kok Wai Cheah Zhaowei Liu

We propose and demonstrate a compact, alignment-free dark-field microscopy technique, termed as organic light-emitting-diode-based plasmonic dark-field microscopy. Experimental results show that it is capable of forming dark-field images of the specimens utilizing a highly integrated chip-scale plasmonic condenser. This technique has high z resolution and high imaging contrast and is suitable f...

2016
P. Ivanov P. Petrova R. Tomova

The application of green phosphorescent complex Tris[2-phenylpyridinato-C,N]iridium(III) Ir(ppy)3 as a dopant in the hole transporting layer (HTL) of Organic light emitting diode (OLED) structure: HTL/ElL/ETL has been studied. We have found that devices containing from 4 wt.% 6 wt.% Ir(ppy)3 emit pure green light with CIE (x;y) chromaticity coordinates 0.2969; 0.4860 0.3184; 04905 very close to...

2004
Z. L. Li S. C. Yang H. F. Meng Y. S. Chen Y. Z. Yang C. H. Liu S. F. Horng C. S. Hsu L. C. Chen

We demonstrate an integration of polymer light-emitting diode ~LED! and polymer transistor in which no patterning of the organic layers is needed. Intrinsic high-mobility semiconducting conjugated polymer poly~3-hexylthiophene!~P3HT! is used as the hole-transport layer for polymer LED. The light emission efficiency is only slightly lower than the LED with conventional heavily doped hole-transpo...

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