نتایج جستجو برای: passivation

تعداد نتایج: 3893  

2010

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directl...

2017
Shinya Kato Tatsuya Yamazaki Yasuyoshi Kurokawa Shinsuke Miyajima Makoto Konagai

Surface passivation and bulk carrier lifetime of silicon nanowires (SiNWs) are essential for their application in solar cell devices. The effective minority carrier lifetime of a semiconductor material is influenced by both its surface passivation and bulk carrier lifetime. We found that the effective carrier lifetime of SiNWs passivated with aluminum oxide (Al2O3) was significantly influenced ...

Journal: :Nano letters 2014
Qi Chen Huanping Zhou Tze-Bin Song Song Luo Ziruo Hong Hsin-Sheng Duan Letian Dou Yongsheng Liu Yang Yang

To improve the performance of the polycrystalline thin film devices, it requires a delicate control of its grain structures. As one of the most promising candidates among current thin film photovoltaic techniques, the organic/inorganic hybrid perovskites generally inherit polycrystalline nature and exhibit compositional/structural dependence in regard to their optoelectronic properties. Here, w...

2016
Liubomyr S. Monastyrskii Yaroslav V. Boyko Bogdan S. Sokolovskii Vasylyna Ya. Potashnyk

An investigation of the model of porous silicon in the form of periodic set of silicon nanowires has been carried out. The electronic energy structure was studied using a first-principle band method-the method of pseudopotentials (ultrasoft potentials in the basis of plane waves) and linearized mode of the method of combined pseudopotentials. Due to the use of hybrid exchange-correlation potent...

2010
Han Wang Jinwook W. Chung Xiang Gao Shiping Guo Tomas Palacios

In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as a...

2010
Norio Sato

Since the day of Faraday many investigations have been conducted on the passivity of metals, but many unclarified problems have still remained on the mechanism of passivation. It has been known that if metal is polarized to more noble potentials progressively in a corrosive solution containing no reduction-oxidation system, the passivation occurs at a critical potential, and a well-defined pote...

2012
A. D. Koehler

AlN passivation layers grown by atomic layer epitaxy have been implemented to passivate the surface of AlGaN/GaN high electron mobility transistors (HEMTs). These layers suppress surface charge trapping effects, such as current collapse, reduction of maximum drain current, and increase of dynamic on resistance. Each passivation scheme is characterized using pulsed I-V measurements, a novel on-w...

Journal: :Physical review letters 2008
Y Gohda S Watanabe A Gross

We report first-principles calculations on electron transport through ultrathin silicon films between aluminum electrodes. The passivation of interface Si atoms at one side of the film with hydrogen makes the current-voltage characteristics asymmetric with quasirectifying properties. The low conductivity in this case can be explained by the weakened metal-induced gap states due to the passivati...

Journal: :Advanced materials 2016
Xinzheng Lan Oleksandr Voznyy Amirreza Kiani F Pelayo García de Arquer Abdullah Saud Abbas Gi-Hwan Kim Mengxia Liu Zhenyu Yang Grant Walters Jixian Xu Mingjian Yuan Zhijun Ning Fengjia Fan Pongsakorn Kanjanaboos Illan Kramer David Zhitomirsky Philip Lee Alexander Perelgut Sjoerd Hoogland Edward H Sargent

A solution-based passivation scheme is developed featuring the use of molecular iodine and PbS colloidal quantum dots (CQDs). The improved passivation translates into a longer carrier diffusion length in the solid film. This allows thicker solar-cell devices to be built while preserving efficient charge collection, leading to a certified power conversion efficiency of 9.9%, which is a new recor...

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