نتایج جستجو برای: photoluminescence pl spectroscopy

تعداد نتایج: 190772  

Journal: :journal of nanostructures 2012
m. mousavi-kamazani m. salavati-niasari d. ghanbari

cuins2 nanostructures were  synthesized  via  a  simple  surfactant-free solvothermal  route.  in  this  synthesis,  thiosemicarbazide  and thioglycolic acid were used as sulfur sources. the effects of different parameters such as type of precursor and time on the morphology and particle  size  of  the  samples  have  been  investigated.  the nanostructures  were  characterized  by  means  of  ...

Journal: :journal of sciences, islamic republic of iran 2011
f. farzaneh

cr2o3 nanoparticles were prepared using cr(no3)3.9h2o as starting material, triethanolamine (tea) as template and water as green solvent under microwave irradiation. the products were characterized by x-ray diffraction (xrd), transmission electron microscopy (tem), fourier transform infrared (ft-ir), photoluminescence (pl) and raman spectroscopy. the size distribution of individual particles we...

Journal: :Coatings 2023

Thick ZnO/ZnAl2O4 coatings were synthesized on zinc alloy Z1 substrates through plasma electrolytic oxidation (PEO) for different anodization times. The prepared characterized by scanning SEM, XRD, diffuse reflectance and photoluminescence spectroscopy in order to establish the relationship between their structural optical properties PEO processing parameters. Under conditions (anodization time...

2008
Kazunari Matsuda Tadashi Inoue Yoichi Murakami Shigeo Maruyama Yoshihiko Kanemitsu

We studied the spectral diffusion and exciton fine structures of single-walled carbon nanotubes (SWNTs) using single carbon nanotube spectroscopy. Two types of single nanotube photoluminescence (PL) spectra were observed at temperatures below 50 K, double peaks with spectral diffusion and a single peak without spectral diffusion. The spectral diffusion occurring in the lower energy peak of the ...

2004
S. J. Henley R. P. Silva

Visible room-temperature photoluminescence (PL) was observed from hydrogen-free nanostructured amorphous carbon films deposited by pulsed laser ablation in different background pressures of argon sPArd. By varying PAr from 5 to 340 mTorr, the film morphology changed from smooth to rough and at the highest pressures, low-density filamentary growth was observed. Over the same pressure regime an i...

Journal: :iranian journal of science and technology (sciences) 2008
m. esmaeili

due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

2009
Shigeo Maruyama Yuhei Miyauchi Yoichi Murakami

Features in Photoluminescence Map of SWNTs Over the past seven years photoluminescence (PL) spectroscopy has emerged as an important characterization tool for determining the (n, m) chirality and population of semiconducting SWNTs. This technique is essential for the chirality selective growth and/or the separation depending on chirality. Under excitation with the appropriate wavelength of ligh...

Journal: :international journal of nano dimension 0
s. amirtharajan nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india. p. jeyaprakash nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india. j. natarajan nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india. p. natarajan nanoscience research lab, department of physics, vhnsn college (autonomous), virudhunagar, 626 001, india.

porous silicon (ps) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying hf concentrations in the electrolytic solution. the structural, surface morphological, optical and surface composition analysis of the prepared samples were done by x-ray diffraction (xrd), scanning electron microscopy (sem), photoluminescence (pl) and fourier transform infrared (fti...

Journal: : 2021

Photoluminescence spectroscopy (PL) has been used to study the optical properties of three-dimensional quantum-sized InGaPAs islands formed by substituting phosphorus arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. PL line array is range 950–1000 nm at room temperature. Studies temperature 78–300 K indicate a significant inhomogeneity island array, presence nonradi...

1999
O. V. Feklisova

The DLTS (Deep Level Transient Spectroscopy) and PL (Photoluminescence) spectra of dislocations introduced in Cz-Si (single crystal grown by the Czochralski method) under clean conditions have been studied. The oxygen effect on the formation of both spectra has been revealed. For the first time, a concomitant decay of both PL and DLTS signals with deformation duration in the range of 0.25 to 14...

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