We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I-V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultravio...

The photoresponse in the electrical conductivity of a single-walled carbon nanotube (SWNT) film is dramatically enhanced when the nanotube film is suspended in vacuum. We show here that the change in conductivity is bolometric (caused by heating of the SWNT network). Electron-phonon interactions lead to ultrafast relaxation of the photoexcited carriers, and the energy of the incident infrared (...

Photodetectors based on two-dimensional (2D) nanostructures have led to a high optical response, and a long photocarrier lifetime because of spatial confinement effects. Since the discovery of graphene, many different 2D semiconductors have been developed and utilized in the ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges. Thi...

While high photoconductive gain has been recently achieved in graphene-based hybrid phototransistors using semiconductor two-dimensional transition/post-transition metal dichalcogenides or quantum dots sensitizers, obtaining fast photoresponse simutaneously remains a challenge that must be addressed for practical applications. In this paper we report a graphene/GaSe nanosheets hybrid photodetec...

Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is...

An improved one-dimensional analysis of CMOS photodiode has been derived in which the effect of the substrate, which forms a high-low junction with the epitaxial layer, has been included. The fully analytical solution was verified with numerical simulations based on parameters extracted from a standard 0.35 μm CMOS process. The parameter availability and the degree of accuracy for photoresponse...