This paper gives some insights in the applications where PECVD nitrides can be introduced to replace the LPCVD layers and how the process parameters need to be varied to obtain the desired properties. Film properties like stress, hydrogen content, wet etch rate and deposition rate are reported. The nitrides are optimized for specific applications and examples on the influence of nitride propert...

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN fi...

587 Abstract— The absence of deep traps for electrons in the spectrum of As 40 Se 30 S 30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

The following article appeared in "Nanoparticle deposition in hydrogenated amorphous silicon films during rf plasma deposition," D.

The execution of special hydrogen diffusion experiments requires an initially hydrogen-free drain layer. Hydrogen-free amorphous silicon (a-Si) deposited by radio frequency magnetron sputter deposition (RFSD) serves this purpose. RFSD yields a rough surface of the film but this can be flattened by an additional post-hydrogenation step. Weak Si-Si bonds are reorganized by hydrogen and the surfac...

In this paper, we reviewed researches about the titanium nitride (TiN) and titanium carbide (TiC) single and multilayer coatings. These coatings were deposited by the plasma assisted chemical vapor deposition (PACVD) technique. Plasma-based technologies are used for the processing of thin films and coatings for different applications such as automobile and aerospace parts, computer disc drives,...

In this paper, the effects of plasma discharge parameters on the nano particles formation process in a plasma enhanced chemical vapor deposition (PECVD) reactor using a model based on equations of ionization kinetics for different active species are studied. A radio frequency applied electric field causes ionization inside the reactor and consequently different reaction schemically active speci...

A vacuum microplasma spray system, operating on gross power levels of 1-3 kW, with powder feed rates below 1 g/min and using plasma gas mixtures of argon and hydrogen, was built and tested. In order to improve the deposition efficiency and quality of coatings, the system was analyzed and the matter of particle entrainment into the plasma jet core was identified as a critical sub-process. Partic...

Remote plasma-activated chemical-vapor deposition (RPACVD) provides a means to deposit thin dielectric films with low ion bombardment and while having high selectivity in generating precursors. In RPACVD of SiO,, gas mixtures of He/O2 or He/N20 are passed through a plasma, producing radicals and excited states that are mixed with silane downstream. Excited states produced in the plasma and prec...