Few papers investigated the electrical properties of interlevel high temperature oxides low pressure chemically vapour deposited (LPCVD HTO) Si02. Silicon dioxide obtained by the surface reaction between SiH,Cl, and N,O at 900°C on LPCVD polysilicon shows lower electrical conductivity in comparison to SiO, thermally grown on polysilicon. It was demonstrated a FowlerNordheim mechanism for the el...

Filling high aspect ratio trenches is an essential manufacturing step for state of the art memory cells. Understanding and simulating the transport and surface processes enables to achieve voidless filling of deep trenches, to predict the resulting profiles, and thus to optimize the process parameters and the resulting memory cells. Experiments of arsenic doped polysilicon deposition show that ...

Silicon direct bonding (SDB) is a bonding technique of two silicon wafers together with homogeneous or heterogeneous layers without the use of any intermediate adhesives. The SDB technique simplifies the process and cost by reducing mask level, and its necessity has increased in terms of its fields of applications such as power devices, SOI, sensors and actuators. Factors which can affect direc...

Major steps used in fabricating surface micromachined capacitive ultrasonic immersion transducers are investigated in this paper. Such steps include membrane formation and cavity sealing under vacuum. Three transducer membrane structures are evaluated: a nitride membrane with an LTO sacrificial layer; a polysilicon membrane with an LTO sacrificial layer; and a nitride membrane with a polysilico...