Boron as thin film material is of relevance for use in modern micro- and nano-fabrication technology. In this research boron films are realized by a number physical chemical deposition methods, including magnetron sputtering, electron-beam evaporation, plasma enhanced vapor (CVD), thermal/non-plasma CVD, remote CVD atmospheric pressure CVD. Various physical, mechanical characteristics these inv...

We report the use of localized annealing via in situ heaters to induce a semi-permanent change in the refractive index of the cladding in ring resonator filters. When compared to other methods for post-fabrication trimming, this method has the advantage that no additional equipment, other than a supply of electrical power, is necessary to cause the index change. Two cladding materials were used...

(La0.5,Sr0.5)CoO3 (LSCO) ®lms were prepared by a sol-gel method on silica grown by various methods such as thermal oxidation, plasma enhanced chemical vapor deposition (PECVD) and atmospheric pressure chemical vapor deposition (APCVD). Polyvinyl alcohol (PVA) was used as a wetting agent to improve the surface wetting behavior of the LSCO precursor solution onto the silica. The surface wetting o...

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes...

This paper reports the preliminary development of a microand nano-fabricated carbon nanotube (CNT) –based electron source intended for micro-propulsion applications. The paper proposes a device that implements a trade-off between microfabrication complexity and performance using a 3D packaging technology to minimize interception and decouple the process flows of the grid and the emitter array. ...

Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically densealigned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with wate...

Results on the characterization of the elecmcal properties of amorphous silicon-films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector st...

Diamond-like nanocomposite (DLN) thin films were deposited on pyrex glass or silicon substrate by plasma enhanced chemical vapor deposition (PECVD) method. These types of films have their unique number of structural, mechanical and tribological properties, which are quite similar with MEMS material properties. DLN films provide a number of unique and

An alloy based on the group IV elements germanium and tin has potential of yielding an earth-abundant low bandgap energy semiconductor material with applications in fields micro-electronics, optics, photonics photovoltaics. In this work, first steps towards plasma enhanced chemical vapour deposition (PECVD) processing a chemically stable, intrinsic GeSn:H are presented. Using tetramethyltin (TM...