نتایج جستجو برای: quantum dot

تعداد نتایج: 309290  

2015
V. A. Fedirko

The paper reports on theoretical study of electron states for a quantum dot in a graphene monolayer. Discrete energy spectrum of quasiparticles inside the quantum dot is found. Energy levels and corresponding quasiparticle resonant wave functions are obtained, which allow calculating the local density of states inside the quantum dot. Some experimental results recently released are referred.

Journal: :Chemical communications 2014
Huidong Zang Prahlad K Routh Rabeka Alam Mathew M Maye Mircea Cotlet

Photoinduced hole transfer from a CdSe/ZnS quantum dot to a conjugated polymer is tuned by varying the quantum dot core size. Hole transfer affects the photoluminescence blinking of the quantum dot, increasing the duration of the on-states and decreasing that of the off-states.

1998
L. J. Guo S. Y. Chou

As the size of a transistor continuously scales down, single electron effects become important [1 – 3]. Previously, we have studied charge transport in single-electron quantum dot transistors which have a channel consisting of a silicon dot separated from the source and the drain by two constrictions [4], and in single-electron MOS memories that have a polysilicon dot floating gate stacked on a...

ژورنال: فیزیک کاربردی 2019

ضخامت لایۀ­ نقاط کوانتومی و نیمه­رسانای شفاف با شکاف بزرگ، میزان ناخالصی لایۀ نقاط کوانتومیو نوع فلز آند از جمله عوامل تأثیرگذار بر بازدهِ سلول­های خورشیدی نقطۀ کوانتومی ناهمجنس (HQDSC) می­باشند. در این مقاله با استفاده از نرم­افزار کامسول نسخه 4/5، ابتدا سلولی شامل یک لایه از نقاط کوانتومی سولفید سرب (PbS) پوشیده از لیگاندهای کوتاه و یک لایه نیمه­رسانای اکسید روی (ZnO) و آندی از جنس طلا شبیه­سا...

Journal: :Physical review letters 2008
A Dousse L Lanco J Suffczyński E Semenova A Miard A Lemaître I Sagnes C Roblin J Bloch P Senellart

Using far-field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling...

Journal: :Nano letters 2009
C B Simmons Madhu Thalakulam B M Rosemeyer B J Van Bael E K Sackmann D E Savage M G Lagally R Joynt Mark Friesen S N Coppersmith M A Eriksson

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling t between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes th...

1998
G. Iannaccone C. Ungarelli M. Macucci E. Amirante M. Governale

Information in a quantum cellular automata architecture is encoded in the polarization state of a cell, i.e. in the occupation numbers of the quantum dots of which the cell is made up. Non-invasive charge detectors of single electrons in a quantum dot are therefore needed, and recent experiments have shown that a quantum constriction electrostatically coupled to the quantum dot may be a viable ...

Journal: :Photochemistry and photobiology 2006
Anna C S Samia Smita Dayal Clemens Burda

Quantum dots have emerged as an important class of material that offers great promise to a diverse range of applications ranging from energy conversion to biomedicine. Here, we review the potential of using quantum dots and quantum dot conjugates as sensitizers for photodynamic therapy (PDT). The photophysics of singlet oxygen generation in relation to quantum dot-based energy transfer is discu...

Journal: :international journal of nanoscience and nanotechnology 2015
h. dallaki m. mehran

quantum-dot cellular automaton (qca) is a novel nanotechnology with a very different computational method in compared with cmos, whereas placement of electrons in cells indicates digital information. this nanotechnology with specifications such as fast speed, high parallel processing, small area, low power consumption and higher switching frequency becomes a promising candidate for cmos technol...

1999
Y. Wang S. Y. Chou

We propose and demonstrate a new field-induced quantum dot transistor that has a nanoscale dot-gate inside the gap of a split gate. Because of the novel structure and small dot size, strong oscillations in the drain current as a function of the gate bias were observed at a temperature up to 4.2 K or with a drain bias up to 5 mV. Temperature dependent study showed that the energy gaps in the dot...

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