Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling were used to quantify how “small-size” effects modify the energy barrier at metal/semiconductor nanostructure nanocontacts, formed by making Schottky contacts to cleaved edges of GaAs quantum wells (QWs). The Schottky barrier height over the QWs was found to systematically increase with decreasing QW width, ...

Quantum wells enable solar cell bandgaps to be tailored to the theoretical optimum, under the assumption of unity absorption. In practice however, quantum well regions are thinner and hence absorb less strongly than bulk material. We predict detailed balance efficiency limits for varying levels of absorptivity in singleand double-junction quantum-well solar cells. These calculations allow us to...

Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spindependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole-spin dynamics for highand low-symmetry crystallographic orientations of the QWs. We directly measure the hole ...

The scattering probabilities of hot excitons in narrow quantum wells (QWs) are obtained. The exciton-phonon matrix element is considered by using an envelope function Hamiltonian approach in the strong quantization limit where the QW width is smaller than the exciton bulk Bohr radius. The Fröhlich-like interaction is taken into account and the contribution of the confined and interface modes to...

Atomic-scale nanofacets were observed in semipolar ð20 2 1Þ and ð20 21Þ InGaN quantum wells (QWs)/GaN quantum barriers interfaces. Transmission electron microscopy studies showed that these nanofacets were mainly composed of ð10 10Þ, ð10 1 1Þ; and ð10 11Þ planes, which led to significant fluctuations in QW thickness. Atom probe tomography studies were carried out to visualize the nanofacet stru...

For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit lateral intra-QW carrier diffusion length current spreading. The mainly impacts overall LED efficiency through sidewall nonradiative recombination, especially for $\mu$LEDs. In this paper, we study green, blue, ultraviolet C (UVC) QWs in three dimensions. We solve Poisson...

Recently, a generalization of nonstandard step operator named the elephant quantum walk (EQW) was introduced. With proper statistical distribution for steps, that generalized EQW (gEQW) can be tuned to exhibit myriad dynamical scaling behavior ranging from standard diffusion hyperballistic spreading. In this work, we study influence statistics size and delocalization initial states on entanglem...

Generating large topologically protected surface currents using conventional III–V infrared materials such as InAsSb/InGaSbAs quantum wells (QWs) and superlattices (SLs) has been important. In materials, topological states can be formed at the edge by hybridizing ordinary electronic band structures. However, achieving out of these is still difficult due to low emission high carrier defects. thi...

We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells QWs . An eight-band k ·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and ...

In this study, the properties of blue organic light-emitting diodes (OLEDs), employing quantum well-like structure (QWS) that includes four different blue emissive materials of 4,4'-bis(2,2'-diphenylyinyl)-1,1'-biphenyl (DPVBi), 9,10-di(naphth-2-yl)anthracene (ADN), 2-(N,N-diphenyl-amino)-6-[4-(N,N-diphenyl amine)styryl]naphthalene (DPASN), and bis(2-methyl-8-quinolinolate)-4-(phenyl phenolato)...