نتایج جستجو برای: random access storage

تعداد نتایج: 760270  

Journal: :IEICE Electronic Express 2017
Yong Ye Yuan Du Weiliang Jing Xiaoyun Li Zhitang Song Bomy Chen

As the main component for modern main memory system, DRAM stores data by capacitors, which must be refreshed periodically to keep the charges. As the size and speed of DRAM devices continue to increase, the overhead of refresh has caused a great power and performance dissipation. In this paper, we proposed a CAM (content-addressable memory)-based Retention-Aware DRAM (CRA-DRAM) system, a hardwa...

1997
Wayne A. Wong Jean-Loup Baer

This paper presents methods to reduce memory latency in the main memory subsystem below the board-level cache. We consider conventional page-mode DRAMs and cached DRAMs. Evaluation is performed via trace-driven simulation of a suite of nine benchmarks. In the case of page-mode DRAMs we show that it can be detrimental to use page-mode naively. We propose two enhancements that reduce overall memo...

2008
Naja Davis

Cover Page and Abstract Tools and Techniques for Analysis The live acquisition of volatile memory (RAM) is an area in digital forensics that has not garnered much attention until most recently. The importance of the contents of physical memory has always taken a back seat to what is considered more important – the contents of physical media. However, a great deal of information can be acquired ...

Journal: :Scalable Computing: Practice and Experience 1999
Sotiris Ioannidis Athanasios E. Papathanasiou Grigorios Magklis Evangelos P. Markatos Dionisios N. Pnevmatikatos J. Sevaslidou

File systems and databases usually make several synchronous disk write accesses in order to make sure that the disk always has a consistent view of their data, and that data can be recovered in the case of a system crash. Since synchronous disk operations are slow, some systems choose to employ asynchronous disk write operations, at the cost of low reliability: in case of a system crash all dat...

2013
Rashmi Jha Swarup Bhunia

Transition Metal Oxide (TMO) Based Resistive Random Access Memory (ReRAM) devices have gathered significant research attention for non-volatile data storage applications. The major advantages lie in terms of scalability, low switching voltages, and process compatibility with the CMOS technologies [1, 2]. However, to take the complete benefit of this enabling technology there are several challen...

2013
S. Rajarajan S.Rajarajan M. Prabhu S. Arunkumar

For several decades, computer’s memory has been volatile. High speed memories such as DRAM and SRAM have been used as main memory and cache memory respectively. Magnetic disks are used as the persistent secondary storage devices. The present DRAM based main memory has reached its energy limits. Due to the advent of nonvolatile memories like PCM, MRAM, RRAM, FeRAM and Flash, there is growing int...

2002
Lars Arge Octavian Procopiuc Jeffrey Scott Vitter

In recent years, many theoretically I/O-efficient algorithms and data structures have been developed. The TPIE project at Duke University was started to investigate the practical importance of these theoretical results. The goal of this ongoing project is to provide a portable, extensible, flexible, and easy to use C++ programming environment for efficiently implementing I/O-algorithms and data...

2012
Funminiyi Olajide Nick Savage

Forensic investigation of the physical memory of computer systems is gaining the attention of experts in the digital forensics community. Forensic investigators find it helpful to seize and capture data from the physical memory and perform post-incident analysis when identifying potential evidence. However, there have been few investigations which have identified the quantity and quality of inf...

Journal: :IEICE Transactions 2011
Shunsuke Okumura Yuki Kagiyama Yohei Nakata Shusuke Yoshimoto Hiroshi Kawaguchi Masahiko Yoshimoto

This paper proposes 7T SRAM which realizes block-level simultaneous copying feature. The proposed SRAM can be used for data transfer between local memories such as checkpoint data storage and transactional memory. The 1-Mb SRAM is comprised of 32-kb blocks, in which 16-kb data can be copied in 33.3 ns at 1.2 V. The proposed scheme reduces energy consumption in copying by 92.7% compared to the c...

2014
Jagan Singh Meena Simon Min Sze Umesh Chand Tseung-Yuen Tseng

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music p...

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