-Memristor is the fourth fundamental passive element after resistor, inductor and capacitor. Memristor is memory resistor which is two terminal device. This semiconductor device is statistically proved by a student in china Leon Chua in 1971. And discovered by scientist. R.Stanley Williams and its team in April 30,2008 in lab of HP. It consist a semiconductor of titanium dioxide in which one ha...

The classic problem in electrical circuit theory, first studied by Kirchhoff in 1847, is the calculation of the resistance between two arbitrary nodes in a resistor network [1]. Besides its long-standing importance in electric circuit theory, the computation of resistances is also connected to a wide range of problems as diverse as random walks [2, 3], first-passage processes [4], lattice Green...

Introduction: Non-linear resistive grids have been proposed 1,2 for image filtering and segmentation. In these implementations, smoothing of noisy data is obtained through the low pass filtering behavior of these resistive grids for small voltage differences between neighboring pixels. Two different methods are used to obtain segmentation with these resistive grids. One is to use so the called ...

The effective resistivity and conductivity of two media that meet at a randomly rough interface are computed in the quasistatic limit. The results are presented in the spectral density representations of the Bergman-Milton formulation for the properties of two-component composite materials. The spectral densities are extracted from computer simulations of resistor networks in which the random i...

a power divider (pd)/ power combiner (pc) with high quality factor and enhanced output ports isolation using substrate integrated waveguide (siw) technology is proposed. an siw cavity is designed to provide a high quality factor filtering response and an smd resistor is attached between two output ports to realize the high isolation. the value of the applied resistor is calculated by using the ...

The state of a 2-D random resistor network, resulting from the simultaneous evolutions of two competing biased percolations, is studied in a wide range of bias values. Monte Carlo simulations show that when the external current I is below the threshold value for electrical breakdown, the network reaches a steady state with a nonlinear current-voltage characteristic. The properties of this nonli...

We present a scaling theory for charge transport in disordered molecular semiconductors that extends percolation theory by including bonds with conductances close to the percolating one in the random-resistor network representing charge hopping. A general and compact expression is given for the charge mobility for Miller-Abrahams and Marcus hopping on different lattices with Gaussian energy dis...