This paper presents a novel wide tuning range CMOS Voltage Controlled Oscillator (VCO). VCO uses an on-chip variable inductor as an additional variable element to extend the tuning range of VCO. The fabricated variable inductor achieves the variable range of 35%. The VCO was fabricated using 0.35 μm standard CMOS process, and can be tuned continuously from 2.13 GHz to 3.28 GHz (tuning range of ...

A low-power, low phase-noise 1.9GHz RF oscillator is presented. The oscillator utilizes a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18μm CMOS process. This paper addresses design issues involved in co-designing micromachined resonators with CMOS circuitry to realize ultra-low power RF transceiver components. The oscillator achieves a phase noise performan...

This paper discusses a RF power harvester optimized for sensitivity and therefore wireless range, for applications requiring intermittent communication. The RF power harvester produces a 1V output at -32dBm sensitivity and 915MHz. This is achieved using a CMOS rectifier operating in the subthreshold region and an off-chip impedance matching network for boosting the received voltage. Equations p...

CMOS implementations for RF applications often employ technology modifications to reduce the silicon substrate loss at high frequencies. The most common techniques include the use of a high-resistivity substrate (ρ>10Ω-cm) or silicon-on-insulator (SOI) substrate and precise bondwire inductors [1, 2]. However, these techniques are incompatible with low-cost CMOS manufacture. This design demonstr...

Original scientific paper Radio frequency identification (RFID) is one of the most rapidly growing technologies to be utilized in almost every sector for storing and retrieving data wirelessly. Current advancements in CMOS technology help the scientists and technologists to reduce the size and improve the functionalities of the RFID circuits. In this paper, the design of an RF-CMOS power splitt...

This paper reviews the basic circuit issues of silicon-on-insulator (SOI) technology for metal-oxide-semiconductor (CMOS) circuits. The superior features of SOI in low power, high speed, high device density and the effect of floating body particularly in partial depletion (PD) SOI device are addressed. Analog and RF circuits are considered and their performances are compared with those reported...

Experimental study and SPICE simulation of CMOS digital circuits latch-up effects due to high power microwave interference are reported in this paper. As a traditional inherent destruction phenomenon, latch-up effect may jeopardize the correct function of the circuits, and could be triggered in various ways such as ESD pulse, cosmic ray, heavy ion particles etc. Through the directly injected ex...

CMOS technology has reached its maturity. Therefore, design engineers used it for developing RF circuits. The advantages of CMOS technology are the higher integration, low-power consumption, low-voltage supply and low-cost compared with Bipolar technology. The use of CMOS process with low length for the channels of the MOSFETs is very important for high-frequency devices. This paper describes a...

Recently low-voltage and low-noise analog circuits with sub100nm CMOS devices are strongly demanded for implementing mobile digital multimedia and wireless systems. Reduction of supply voltage makes it difficult to attain a signal voltage swing, and device deviation causes large DC offset voltage and 1/f noise. This paper describes noise reduction technique for CMOS analog and RF circuits opera...

In this paper, a CMOS radio frequency (RF) multi-band band-pass amplifier using a high-Q active inductor load with a binary code band selector suitable for multi-standards wireless applications is proposed. By employing the improved high-Q active inductor including two bits binary controlled code, the RF multi-band amplifier operating at four different frequency bands is realized. The proposed ...