نتایج جستجو برای: s sio2
تعداد نتایج: 724020 فیلتر نتایج به سال:
of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode Katsuhiko Nishiguchi, Andres Castellanos-Gomez, Hiroshi Yamaguchi, Akira Fujiwara, Herre S. J. van der Zant, and Gary A. Steele NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, The N...
Growing SiO2 layer by wet-chemical oxidation of Si surfaces before growth another insulating film(s) is a used method to passivate interfaces in applications (e.g., solar cell, photodiode) at low temperatures (LT) below 450 °C. We report on potential LT ultrahigh-vacuum (UHV) treatments combined with the oxidation, investigating effects LT-UHV after and growing Al2O3 film top SiO2/Si. This modi...
In order to better understand and develop the technology of integrating dephosphorization decarburization in a single converter (abbreviated as IDDSC), relevant thermodynamic issues were discussed by calculation. Based on calculation, bridges between phosphorus distribution ratio, temperature, slag composition constructed. Besides, connections behavior microstructure also established investigat...
To optimize CaF2 content in highly basic CaO-18%Al2O3-SiO2-10%MgO-CaF2 (%CaO/%SiO2=6, denoted as C/S=6) refining slags used for the production of Al-killed duplex stainless steel with high cleanliness demand, effect on viscosity and ability were studied compared typical CaF2-free CaO-30%Al2O3-SiO2-10%MgO (C/S=6) slag. The addition decreasing slag becomes less obvious increasing temperature cont...
Morris, R. V.; Vaniman, D. T.; Blake, D. F.; Gellert, R.; Chipera, S. J.; Ming, D. W.; Morrison, S. M.; Downs, R. T.; Rampe, E. B.; Treiman, A. H.; Yen, A. S.; Achilles, C. N.; Bristow, T. F.; Fendrich, K.; Crisp, J. A.; Des Marais, D. J. ; Farmer, J. D. ; Grotzinger, J. P.; Morookian, J. M. and Schwenzer, S. P. (2016). High-Temperature, Perhaps Silicic, Volcanism on Mars Evidenced by Tridymite...
BACKGROUND Silica dioxide (SiO2) has been used in various industrial products, including paints and coatings, plastics, synthetic rubbers, and adhesives. Several studies have investigated the genotoxic effects of SiO2; however, the results remain controversial due to variations in the evaluation methods applied in determining its physicochemical properties. Thus, well characterized chemicals an...
Information on the vaporization processes and thermodynamic properties of glass-forming oxide melts in the systems MgO-B2O3-SiO2, CaO-B2O3-SiO2, SrO-B2O3-SiO2, BaO-B2O3-SiO2, PbO-B2O3-SiO2, CdO-B2O3-SiO2, ZnO-B2O3-SiO2, Bi2O3-B2O3-SiO2 and Bi2O3-GeO2-SiO2 together with the earlier obtained data is discussed. These data were obtained by high-temperature mass spectrometric method. Various types o...
We present a systematic study on the preparation, characteration and potential application of Fe3O4 and Fe3O4@SiO2 nanoparticles. Fe3O4 nanoparticles of controllable diameters were successfully synthesized by solvothermal system with tuning pH. The magnetic properties of nanoparticles were measured by vibration sample magnetometer. Fe3O4@ SiO2 nanoparticles were obtained via classic Stöber proc...
We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/ SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe-nanopatterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5–90 nm), the SiO2 thickness (3–4 nm), and the SiGeshell thickness (2–15 nm) have been demonstrated, ...
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