In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-le...

in this paper, the electrochemical behaviour of passive films formed on aisi 321 stainless steel (aisi 321)immersed in 0.1 m naoh + 0.1 m koh solution was evaluated by different electrochemical techniques. forthis purpose, passive films were formed at open circuit potential for 1 to 12 hours and then electrochemicalmeasurements were done. the polarization curves suggested that aisi 321 showed e...

We report results of x-ray photoemission and cathodoluminescence spectroscopies studies of interface formation at metal-GaAs junctions. The results are interpreted by using a microscopic model of metal-semiconductor interfaces. Our low-temperature measurements and analyses show the validity of Schottky'S phenomenological description, thereby suggesting that metalinduced gap states and native de...

Following a brief historical overview on the origin and the evolution of Schottky noise we discuss applications in the field of beam diagnostics in particle accelerators. A very important aspect of Schottky diagnostics is the fact that it is a non perturbing method. Essentially statistics based, it permits to extract beam relevant information from rms (root mean square) noise related to the mov...

The aim of this paper is to model and characterize the current voltage characteristics of Schottky Barrier (SB) Carbon NanoTube Field Effect Transistors (SB-CNTFETs) below and above threshold, in order to evaluate the noise margin and output voltage swing, whose values are necessary in the design of digital circuits.

We present results on the experimental and theoretical investigations of metal contacts on chalcogen passivated GaAs(1 0 0) surfaces. Photoemission spectroscopy investigations show that depending on the metal used for the contact formation the chalcogen passivation reduces the interaction between metals and GaAs(1 0 0). For Sb no chemical reaction at all with the substrate surface is found, whi...

In this paper, the design of a novel photodetector, working at 1.55μm and completely silicon compatible, is reported. The device is a resonant cavity enhanced (RCE) structure incorporating a silicon photodetector based on the internal photoemission effect. In order to quantify the performance of photodetector, quantum efficiency including the image force effect as a function of bias voltage are...

Paramagnetic ions will influence the thermal expansion of an insulating crystal at temperatures close the Schottky specific heat peak. When the ion exhibits a dynamic Jahn-Teller effect, tunneling between different modes . distortion can occur. The sensitivity of the level splittings to the height of the tunnelling barrier then leads to an exce R tionally .large contribution. Experimental inves...

We investigated the properties of pulse propagation on nonlinear traveling-wave field effect transistors (TW-FET) to develop a method for amplifying short electrical pulses. TW-FETs are a special type of FET whose electrodes are employed not only as electrical contacts but also as transmission lines. Due to the presence of electromagnetic couplings between the gate and drain lines, two differen...

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with...