Abstract Very useful in many fields of applied electronics, the classifier find a lot of immediate applications in pattern recognition, artificial intelligence and statistics domains. A new current-mode CMOS classifier based on an Euclidean distance circuit will be further presented. The system is designed for a low-power low-voltage operation that could be achieved by avoiding to use any casco...

In the literature, Improved Recycling Folded Cascode (IRFC) Operational Transconductance Amplifier (OTA) is proposed for enhancing the DC gain and the Unity Gain Bandwidth (UGB) of the Recycling Folded Cascode (RFC) OTA. In this paper, an enhanced IRFC (EIRFC) OTA which uses positive feedback at the cascode node is proposed for enhancing the differential mode (DM) gain without changing the unit...

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Abstract – Modeling of the cascode switching structure used in Flyback converter for achieving fast startup in the deeply dimmed phase-cut LED driver is presented in this paper. The cascode structure’s inherent instability and oscillation issue is modeled and analyzed quantitatively. Three solutions are proposed to stabilize the structure and suppress the unstable voltage oscillation. Solutions...

Current scanning technology for the brain and heart requires electrodes to be placed on the surface, with a wire connected to each electrode. Because the electrodes are large, it is impossible to achieve a high sampling resolution of the signals from the tissue being scanned. Silicon based structures are not very suitable for this application. They have a rigid planar surface which prevents the...

An s-domain analysis of the full dynamics of the pole-zero pair (frequency doublet) associated with the broadly used CMOS active-cascode gain-enhancement technique is presented. Quantitative results show that three scenarios can arise for the settling behavior of a closed-loop active-cascode operational amplifier depending on the relative locations of the unity-gain frequencies of the auxiliary...

We report results of the analytical and numerical investigation of self-heating effects in GaN-based high-power field-effect transistors. The problem of heat transfer in a transistor structure has been solved both analytically, using the method of images, and numerically. Two-dimensional electrothermal simulations of the GaN metal-semiconductor field-effect transistors on SiC and sapphire subst...

A novel and scalable method enabling the integration of dissimilar thin-film devices for high density large-area sensors is demonstrated. The validated by integrating CdS/CdTe P-N diodes with poly-Si transistors (TFTs) in an active pixel sensor (APS) scheme. These have been used separately low-cost applications such as liquid-crystal displays (Poly-TFTs) solar cells (CdS/CdTe) methods allow a s...