The characterization of circular pad GaAs detectors with guard rings fabricated at the University of Glasgow was performed in the Department of Physics of the Politecnico di Milano, with the use of the Politecnico's equipment and expertise. Current transient measurements were made for reverse and forward bias steps at room temperature. Current voltage curves were also obtained for the detectors...

The tremendous growth of communications systems in recent years has put a demand on the electronics industry to provide higher speed integrated circuits than are currently available with today's silicon technology. To help meet this demand, the electronics industry is developing new semiconductor materials such as gallium arsenide which already report clock frequencies of 1-3 GHz in GaAs integr...

Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 “C plasma enhanced chemical vapor deposition (PECVD) SiO, film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiOz cap. Improved C-V characteristics were...

Articles you may be interested in Plasmonic light trapping in an ultrathin photovoltaic layer with film-coupled metamaterial structures Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study Appl. The effects of temperature on the key parameters of a prototype GaAs 55 Fe radioisotope X-ray microbattery were studied ...

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Three-inch (100) gallium arsenide wafers were bonded to (1102) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 ◦C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal ...

Two semiconducting hybrid gallium selenides, [Ga6Se9(C6H14N2)4][H2O] (1) and [C6H14N2][Ga4Se6(C6H14N2)2] (2), were prepared using a solvothermal method in the presence of 1,2-diaminocyclohexane (1,2-DACH). Both materials consist of neutral inorganic layers, in which 1,2-DACH is covalently bonded to gallium. In 1, the organic amine acts as a monodentate and a bidentate ligand, while in 2, bident...

Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30%) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP2). The high-efficiency GaAsbased solar cells are being produced on a commercial scale, particularly for spa...

Abstract The advancement in technology semiconductor materials significantly contributed improvement of human life by bringing breakthrough fabrication optoelectronics and power devices which have wide applications medicine communication. Gallium Arsenide (GaAs) Nitride (GaN) are versatile for such but with relative merits demerits. GaAs transistors suitable both narrowband wideband due to very...