Today's circuit technology requires low-power transistors and diodes to extend Moore's law. While research has been focused on reducing power consumption of transistors, have not widely studied. Here, we report a low-power, thus steep-slope Schottky diode, with “cold metal” source. The barrier between metal electrode bulk MoS 2 enabled the diode behavior, IV curve originated from change in dens...

Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance ...

We report on high quality-factor Heterostructure Barrier Varactor making benefit of epitaxial stacking and planar integration, with a cut-off frequency in the far infrared region. To this aim, high doping concentrations in the depletion (2x10 17 cm) and contact (1x10 cm) InGaAs regions lattice matched to an InP substrate and an InAlAs/AlAs blocking barrier scheme were used. Planar integration o...

Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fa...

SiC Schottky Barrier diodes (SiC-SBD) are known to oscillate/ring in the output terminal when used as free-wheeling diodes in voltage source converters. This ringing is due to RLC resonance between the diode capacitance, parasitic resistance and circuit stray inductance. In this paper, a model has been developed for calculating the switching energy of SiC diodes as a function of the switching r...

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrod...

2014 A Schottky diode exhibits a barrier height which increases when the semiconductor doping is superficially inversed. This effect is modellized, so as to show the influence of the main parameters : doping and thickness of the inversion layer, interface state configuration, metal work function. The analysis of a few available experimental results is consistent with the assumption that the int...