نتایج جستجو برای: si

تعداد نتایج: 74952  

2014
Murugesan Raju Puttur Santhoshkumar Leike Xie K. Krishna Sharma

Received: May 12, 2014 Published: May 22, 2014 Figure 5. Aggregations of denaturing proteins in the presence of miniαA-chaperone or chimeric mini-chaperone (CP1). (A) Heatand EDTA-induced ADH (5 μM) aggregation in the presence of mini-αA (40 μM) or mini-αA (Δ87−88, 40 μM) at 37 °C. (B) Heat-induced citrate synthase (4 μM) aggregation assay at 43 °C in the presence of mini-αA (40 μM) or CP1 (40 ...

2013
Ahmad Hasan Khan K C Roy

The most powerful channel coding schemes, namely, those based on turbo codes and LPDC (Low density parity check) codes have in common principle of iterative decoding. Shannon’s predictions for optimal codes would imply random like codes, intuitively implying that the decoding operation on these codes would be prohibitively complex. A brief comparison of Turbo codes and LDPC codes will be given ...

Journal: :Angewandte Chemie 2011
Sakya S Sen Shabana Khan Herbert W Roesky Daniel Kratzert Kathrin Meindl Julian Henn Dietmar Stalke Jean-Philippe Demers Adam Lange

A. Z. Moshfegh M. Kargarian O. Akhavan R. Azimirad

Electrical, structural and morphological properties of Ni silicide films formed in Ni(Pt 4at.% )/Si(100) and Ni0.6Si0.4(Pt4at.% )/Si(100) structures at various annealing temperatures ranging from 200 to 1000 oC were studied. The Ni(Pt) and Ni0.6Si0.4(Pt) films with thickness of 15 and 25 nm were deposited by RF magnetron co-sputtering method, respectively.  The annealing process of the structur...

Introduction: Glycemic index (GI), glycemic load (GL), and satiety index (SI) are important factors in metabolic diseases, particularly diabetes and obesity. This study aimed to investigate the effects of barley flour on the GI, GL, and SI of white bread. Materials and Methods: To determine GI, ten healthy individuals were examined on four different days within one-week intervals. The blood sug...

Journal: :The journal of physical chemistry. B 2005
Lauren J Webb E Joseph Nemanick Julie S Biteen David W Knapp David J Michalak Matthew C Traub Ally S Y Chan Bruce S Brunschwig Nathan S Lewis

Hydrogen-terminated, chlorine-terminated, and alkyl-terminated crystalline Si(111) surfaces have been characterized using high-resolution, soft X-ray photoelectron spectroscopy from a synchrotron radiation source. The H-terminated Si(111) surface displayed a Si 2p(3/2) peak at a binding energy 0.15 eV higher than the bulk Si 2p(3/2) peak. The integrated area of this shifted peak corresponded to...

صادق زاده, محمد علی ,

In this work, the epitaxially grown, lattice–matched p-Si/Si1-xGex/Si inverted remote doped structures have been characterized using X-ray and electrical techniques. The Si cup layer thickness () and Ge content (x) have been determined from computer simulation of intensity and angular sepration of (004) peaks observed in the X-ray diffraction pattern due to misorientaion of corresponding Bragg ...

ژورنال: مواد نوین 2019

در این پژوهش به ارزیابی ریزساختار و رفتار تریبولوژیکی فولاد کربنی CK45 پوشش داده شده با آلیاژهای Fe-Al و     Fe-Al-Si با استفاده از فرآیند GTAW پرداخته شد. جهت بررسی ریزساختارهای تشکیل شده از میکروسکوپ نوری و همچنین جهت تعیین فازهای موجود روی سطح روکش­ها از آزمون پراش اشعه ایکس (XRD) استفاده شد. جهت ارزیابی رفتار سایشی روکش­های ایجاد شده از آزمون سایش پین روی دیسک در دو دمای محیط و 500 درجه سان...

2015
Paul Dütting

• Si is the set of (pure) strategies of player i, • S = ∏ i∈N Si is the set of states, • ci : S → R is the cost function of player i ∈ N . In state s ∈ S, player i has a cost of ci(s). We denote by s−i = (s1, ..., si−1, si+1, ..., sn) a state s without the strategy si. This notation allows us to concisely define a unilateral deviation of a player. For i ∈ N , let s ∈ S and si ∈ Si, then (si, s−...

2017
I. Kurosawa M. Maezawa M. Aoyagi H. Nakagawa K. Yamamoto S. Matsumoto

We propose a high mobility superconductor gate nMOSFET using undoped Si as the substrate. We have studied superconducting NbN gate nMOSFETs fabricated on p-type Si, undoped Si and n-type Si substrate, respectively. The nMOSFETs on undoped Si and n-type Si have operated properly at 4.2 K. The transconductance of nMOSFETs on undoped Si substrate is higher than that of nMOSFET on p-type Si. The di...

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