نتایج جستجو برای: sic tic

تعداد نتایج: 21959  

2012
Remigijus Vasiliauskas

Current advancement in electronic devices is so rapid that silicon, the semiconductor material most widely used today, needs to be replaced in some of the fields. Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at elevated temperature, and in harsh environments. Hexagonal polytypes of SiC, su...

Journal: :journal of physical and theoretical chemistry 0
mahdi rezaei sameti department of physical chemistry, faculty science, malayer university, malayer m. rakhshi department of chemistry, university of kashan, kashan, iran

in the present study we focused on the electronic and structural properties of na and mg adsorption on the surface of the (6, 6) armchair sicnts. the adsorption energy (eads), band gap energy (eg), partial density of state (pdos), chemical potential (μ), global hardness (η), electrophilicity index (ω), global softness (s), work function values (φ) and work function change (δφ) are calculated by...

Journal: :Behaviour research and therapy 2013
Matt W Specht Douglas W Woods Cassandra M Nicotra Laura M Kelly Emily J Ricketts Christine A Conelea Marco A Grados Rick S Ostrander John T Walkup

The comprehensive behavioral intervention for tics (CBIT) represents a safe, effective non-pharmacological treatment for Tourette's disorder that remains underutilized as a treatment option. Contributing factors include the perceived negative consequences of tic suppression and the lack of a means through which suppression results in symptom improvement. Participants (n = 12) included youth age...

2013
Amir Kalev Gilad Gour

We construct the set of all general (i.e. not necessarily rank 1) symmetric informationally complete (SIC) positive operator valued measures (POVMs), and thereby show that SIC-POVMs that are not necessarily rank 1 exist in any finite dimension d. In particular, we show that any orthonormal basis of a real vector space of dimension d 2 − 1 corresponds to some general SIC POVM and vice versa. Our...

2006
Y. Katoh L. L. Snead T. Nozawa N. B. Morley W. E. Windes

Ceramic matrix composites (CMC’s), particularly silicon carbide (SiC) fiber-reinforced SiC-matrix (SiC/SiC) composites, have been studied for advanced nuclear energy applications for more than a decade. The perceived potentials for advanced SiC/SiC composites include the ability to operate at temperature regimes much higher than heat-resistant alloys, the inherent low inducedactivation nuclear ...

Journal: :Journal of neurology, neurosurgery, and psychiatry 2000
S Chouinard B Ford

BACKGROUND Tic disorders presenting during adulthood have infrequently been described in the medical literature. Most reports depict adult onset secondary tic disorders caused by trauma, encephalitis, and other acquired conditions. Only rare reports describe idiopathic adult onset tic disorders, and most of these cases represent recurrent childhood tic disorders. OBJECTIVE To describe a large...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تبریز - دانشکده مکانیک 1394

در این پژوهش کامپوزیت های سرامیکی sic zrb2–25 vol% به منظور بررسی تاثیر متغیرهای فرآیند (دما، زمان و فشار پرس گرم) و اندازه ذره sic (20 نانومتر، 200 نانومتر و 5 میکرومتر) روی رفتارچگال شدن، متوسط اندازه دانه zrb2 و سختی ویکرز ساخته شدند. یک روش طراحی آزمایش (روش تاگوچی) برای شناسایی میزان تاثیر هر یک از متغیرها و همچنین تعیین شرایط بهینه مورد استفاده قرار گرفت. بر اساس تحلیل های آماری فشار و دم...

ژورنال: Medical Laboratory Journal 2007
Amirian, M, Biglarzadeh, M, Mohammadian Yajloo,, M, Nasroallahzadeh Sabet, M, Sahebgadam Lotfi, A, Zhalehjoo, N,

Abstract Background & Objective: Alpha-1-antitrypsin (AAT) is the major component of the human plasma alpha-1 globulin proteins and acts as a major inhibitor of proteolytic enzymes, particularly elastase. AAT deficiency is accompanied by lung, liver and other disorders, therefore, AAT is clinically important and its precise evaluation is diagnostically critical. In present study serum AAT was e...

2017
Yintang Yang Baoxing Duan Song Yuan Hujun Jia

Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...

2001
X. C. TONG A. K. GHOSH

In the present work, the room and elevated temperature mechanical behavior of Al/TiC, high-strength Al-Si/TiC and the elevated temperature-resistant Al-Fe(-V-Si)/TiC composites has been evaluated. The microstructural characteristics of ingot metallurgy (IM) or rapid solidification (RS) Al-Si/TiC and Al-Fe(-V-Si)/TiC composites could be thought of as a combination of the related alloy matrix mic...

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