For specified program behavior and clocking overhead, there is an optimum cycle time. This can be improved somewhat by using wave pipelining, but program unpredictability ultimately limits performance by restricting both cycle time and instruction level parallelism. Algorithm and application implementation should be based on understanding of program behavior, CAD tools, and technology. System o...

background: the existing evidence suggests that plasma adiponectin concentrations can be indicative of the presence and severity of coronary artery disease (cad). however, the results of the studies conducted hitherto on this subject are inconsistent. we sought to investigate the possible correlation between plasma adiponectin levels and the presence and severity of cad in patients undergoing n...

We investigate the performances of 18 nm gate length AlInN/GaN, InP/InGaAs heterostructure and a Silicon double gate MOSFET, using 2D Sentaurus TCAD simulation. The heterostructure device uses lattice-matched wideband Al0.83In0.17N /InP and narrowband GaN / In0.53Ga0.47As layers, along with high-k Al2O3 as the gate dielectric, while silicon based device uses SiO2 gate dielectric. The device has...

Due to the large surface to volume ratio in nanowires, small changes in surface condition result in large changes in current–voltage characteristics. As a consequence, the overlap of the end-wire contact with the oxide-covered surface along the length of the nanowire can have a significant effect on the current–voltage characteristics of the wire. We present TCAD studies of this effect. One of ...

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangul...

With the view to analyzing piezoresistive effects in silicon microstructures we implemented a rigorous physically-based model in the multidimensional general purpose device simulator DESSIS'~~. In this model, the dependence of the piezoresistive coefficients on temperahue and doping concentration is included in a numerically hactable way. Using a commercial TCAD system (ISE), the practicability...

TCAD tools have been used to study the influence of both the uniaxial (process-induced) and biaxial (substrate-induced) strain on nanoscale MOSFETs down to 45 nm gate length. Processinduced stress has been introduced using SiGe, SiGeC, and SiC in the source/drain regions. Scalability of strained-Si MOSFETs and SPICE parameter extraction by combining TCAD and BSIM3 model are presented for the fi...

We started TCAD simulations last year to understand the radiation damage in Double Sided Silicon Strip Detectors (DSSD) for the CBM Silicon Tracking System. We used the public domain versions from Stanford namely SUPREM for Process Simulation and PISCES for device simulation [1]. The results were reported in the GSI Scientific Report 2008 [2]. Now we are using the three-dimensional TCAD simulat...

Atherosclerosis is one of the most important coronary artery disease (CAD) caused by lipid accumulation, hypertension, smoking, and many other factors such as environmental and genetic factors. It has been recorded that genetic variations in rs10757278 and rs1333049 are correlated with CAD. In the present study, 100 blood samples were collected (50 CAD patients and 50 appeared to be healthy con...

Genome-Wide Association Studies (GWAS) have identified genetic variants contributing to the risk of cardiovascular disease (CVD) at the chromosome 9p21 locus. The chromosome 9p21 is an important susceptibility locus for several multifactorial diseases like ischemic stroke, aortic aneurysm, type 2 diabetes mellitus and coronary artery disease (CAD). F7 gene because of its role in activating the ...