Sintering with low frequency rf power (-50 M H z ) is a new technique with unique capabilities that has been used to sinter a variety of ceramic materials, including zirconia-toughened alumina, alumina, silicon carbide, and boron carbide. Processing with low frequencies offers many advantages compared to processing with conventional microwave frequencies (915 MHz and 2.45 GHz). Because of the l...

of the Thesis Characterization of Dislocations Structures and Properties in Silicon Carbide Bulk Crystals and Epilayers

Unknown quantum electronic conductance across nanojunctions made of silicon-doped carbon wires between carbon leads is investigated. This is done by an appropriate generalization of the phase field matching theory for the multi-scattering processes of electronic excitations at the nanojunction and the use of the tight-binding method. Our calculations of the electronic band structures for carbon...

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.

The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...

Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution ...

We report on the preparation, room temperature spectral reflectance and high-temperature thermal emittance characterization of different boride and carbide Ultra-High Temperature Ceramics (UHTCs). The investigated samples are compared with a reference material for solar absorber applications, i.e. silicon carbide. We show that spectral and thermal emittance properties of UHTCs are promising for...