We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon-on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity and coupling angle dependence are experimentally investigated. A record ultrahigh CE of -0.58 dB with a 3 dB bandwidth of 71 nm and low back reflection are de...

We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.

We have investigated the electrical activation of implanted boron in silicon-on-insulator (SOI) material using Hall effect, four-point probe, and secondary ion mass spectrometry. Boron was implanted at energies ranging from 1 keV to 6.5 keV with a dose of 331014 cm−2 into bonded SOI wafers with surface silicon thickness ranging from 300 Å to 1600 Å. In one sample set, furnace anneals at 750 °C ...

A Silicon-on-Insulator (SOI) Differential Quadrature Phase Shift Keying (DQPSK) demodulator based on a novel Multimode Interference (MMI) design is characterized for a number of operating wavelengths, with results indicating good uniformity and low wavelength dependency. Keywordssilicon integrated devices; DQPSK demodulator; MMI; characterization

Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are...

A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuous-wave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-ba...

Scanning rates of the atomic force microscope (AFM) could be significantly increased by integrating the force sensing probe with microelectromechanical systems (MEMS). We present a micromachining method for batch fabrication of in-plane AFM probes that consist of an ultra-sharp silicon nitride tip on a single crystal silicon cantilever. Our fabrication method is fully compatible with the silico...

An ion transport code was developed for simulating ionization energy deposition by energetic ions in sensitive volumes of complex structures. The code was used to simulate recent microdosimetry measurements performed with silicon-on-insulator (SOI) microdosimeters in Fast Neutron Therapy (FNT).

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...

We describe the design, fabrication and measurement of an integrated-optical Bragg grating filter, operating at a freespace wavelength of 1543 nm, based upon a silicon-on-insulator (SOI) ridge waveguide. The measured spectral response for a 4-mm long grating has a bandwidth of 15 GHz (0.12 nm), and shows good agreement with theoretical predictions.