نتایج جستجو برای: silicon on insulator technology
تعداد نتایج: 8634169 فیلتر نتایج به سال:
Cristina H. Amon Fellow ASME Raymond Lane Distinguished Professor Mechanical Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213; Faculty of Applied Science and Engineering, University of Toronto, Toronto, Ontario M5S 1A4, Canada e-mail: [email protected] Influence of Phonon Dispersion on Transient Thermal Response of Silicon-on-Insulator Transistors Under Self-Heat...
Low frequency noise characterisation of 0.12 μm SOI CMOS technology was performed for Partially and Fully Depleted N-MOSFETs. Static performances are first presented, then we address the drain current fluctuations in both linear and saturation regimes. Taking into consideration the usually admitted 1/f noise models in MOS devices and their applicability in our case, we finally point out the enh...
We investigated the frequency dependences of Y22 of FDSOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET’s RF behavior can be well reproduced with the proposed model including the drain current response delay.
Performance and complexity are considered here as two orthogonal axes. Performance metrics are recalled. Then different complexity metrics and scales are proposed. Different definitions of complexity are used depending on the considered level of abstraction. Finally, SOI and bulk CMOS technologies are compared in this space.
This letter presents the design of a monolithic pixel sensor with 10×10 μm pixels in OKI 0.15 μm fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e− beam at the LBNL ALS.
The device design of future nanoscale MOSFETs is reviewed. Major challenges in the design of the nanometer MOSFETs and the possible solutions are discussed. In this paper, special emphasis is placed on the combination of new transistor structures that suppress the short channel effect and on back-gate voltage control that suppresses the characteristics variations. Two new device architectures, ...
The effect of ultraprecision grinding on microstructural change in silicon monocrystals, such as surface roughness and dislocation structure, was investigated both experimentally and theoretically. The study found that there exists an additional concentration of oxygen and carbon in an amorphous layer for all investigated grinding regimes with their distributions dependent on the grinding varia...
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