نتایج جستجو برای: spin valve

تعداد نتایج: 229433  

2007
M. Zareyan W. Belzig

We study fluctuations of spin-polarized currents in a three-terminal spin-valve system consisting of a diffusive normal metal wire connected by tunnel junctions to three ferromagnetic terminals. Based on a spin-dependent Boltzmann-Langevin equation, we develop a semiclassical theory of charge and spin currents and the correlations of the currents fluctuations. In the three terminal system, we s...

2017
André Dankert Saroj P. Dash

Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By per...

2011
J. Cucchiara Eric E. Fullerton J. Z. Sun S. Mangin

Magnetization excitation and reversal induced by spin-transfer torques is described in terms of power received or dissipated in a macrospin system. This approach provides a clear and intuitive understanding of the effect of both applied magnetic fields and injected spin-polarized currents on magnetization reversal. It is illustrated by solving the case of magnetization reversal in a nanopillar ...

Journal: :Nano letters 2008
A Iovan S Andersson Yu G Naidyuk A Vedyaev B Dieny V Korenivski

We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob...

2009
Sankaran Lakshmi Stephan Roche Gianaurelio Cuniberti

We report on the possibility for a spin-valve effect driven by edge defect engineering of zigzag graphene nanoribbons. Based on a mean-field spin-unrestricted Hubbard model, electronic band structures and conductance profiles are derived, using a self-consistent scheme to include gate-induced charge density. The use of an external gate is found to trigger a semiconductor-metal transition in cle...

Journal: :IEEE Transactions on Magnetics 1997

Journal: :Communications Physics 2020

Journal: :Physical Review Letters 2007

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