The standard IBM 45 nm technology is widely adopted for industrial and academic purpose by integrates circuit designers. Original models provided by foundry are not accurate, which might cause inaccuracy in circuit simulations. Equivalent circuit models, using RLC elements to simulate electrical component, will effectively deliver their electrical performance. This study consists of four steps ...

The on chip spiral inductors are one of the key components in the development of the RFIC‟s as they determine the performance of the circuits such as VCO, LNA, mixers etc. In this paper, the design of an inductor for GaN based RFICs operating in C-band is presented. Sapphire (Al2O3), which is a common substrate for GaN, is used as substrate and silicon nitride (Si3N4), which is a common passiva...

The effective trace resistance of a multiturn spiral inductor operating at high frequencies is known to increase dramatically above its dc value, due to proximity effect or current crowding. This phenomenon, which dominates resistance increases due to skin effect, is difficult to analyze precisely and has generally required electromagnetic simulation for quantitative assessment. Current crowdin...

This article describes a previously unreported single-event radiation effect in spiral inductors manufactured commercial CMOS technology when subjected to ionizing radiation. Inductors play major role as the component determining frequency of $LC$ </in...

In this work, a new gradient based reverse modeling approach employing Artificial Neural Networks (ANNs) for systematic RF/microwave modeling is introduced. This approach is particularly suited to modeling scenarios, where standard ANN multi-layer perceptron (MLP) fails to deliver a satisfactory model. The proposed approach detects the simplest input-output relationship inherent to the modeling...

Spiral inductors fabricated using a 90nm CMOS process have been characterized and analyzed. The extracted series resistance increases with frequency and temperature. The extracted resistance temperature coefficient exhibits a strong dependence on operating frequency. It gradually decreases with frequency and is different from the results using DC temperature coefficients. A single π-model is us...

We present several new simple and accurate expressions for the DC inductance of square, hexagonal, octagonal, and circular spiral inductors. We evaluate the accuracy of our expressions, as well as several previously published inductance expressions, in two ways: by comparison with three-dimensional field solver predictions and by comparison with our own measurements, and also previously publish...