نتایج جستجو برای: sputtering

تعداد نتایج: 8003  

2011
Lukasz Rzeznik Robert Paruch Barbara J. Garrison Zbigniew Postawa

0168-583X/$ see front matter 2010 Elsevier B.V. doi:10.1016/j.nimb.2010.11.098 ⇑ Corresponding author. E-mail addresses: [email protected] (L. R uj.edu.pl (Z. Postawa). Molecular dynamics computer simulations are employed to probe processes taking place during continuous irradiation of Ag(1 1 1) surface by keV Ar872 projectiles. Surface modification, the total sputtering yield, and the a...

2016
Lukasz Rzeznik Yves Fleming Tom Wirtz Patrick Philipp

Secondary ion mass spectrometry (SIMS) on the helium ion microscope (HIM) promises higher lateral resolution than on classical SIMS instruments. However, full advantage of this new technique can only be obtained when the interaction of He(+) or Ne(+) primary ions with the sample is fully controlled. In this work we investigate how He(+) and Ne(+) bombardment influences roughness formation and p...

2006
J. P. Allain M. D. Coventry D. N. Ruzic

The lithium-sputtering yield from lithium and tin-lithium surfaces in the liquid state under low-energy, singly charged particles as a function of target temperature is measured by using the IIAX (Ion-surface Interaction Experiment) facility. Total erosion exceeds that expected from conventional physical sputtering after accounting for lithium evaporation for temperatures between 200 and 400 oC...

Journal: :iranian journal of chemistry and chemical engineering (ijcce) 2009
negin manavizadeh alireza khodayari ebrahim asl soleimani sheida bagherzadeh mohammad hadi maleki

indium tin oxide (ito) thin films were deposited on glass substrates by rf sputtering using an ito ceramic target (in2o3-sno2, 90-10 wt. %). after deposition, samples were annealed at different temperatures in vacuum furnace. the post vacuum annealing effects on the structural, optical and electrical properties of ito films were investigated. polycrystalline ito films have been analyzed in wide...

2014
Anna Stolarz Raimo Seppälä

Targets of 58Ni and 60Ni with areal density between 71 and 105 μg/cm2 backed with polyimide foil of 35-40 μg/cm2 were prepared by sputtering with Ar ions produced by a home made sputtering device at the Target Laboratory, University of Jyväskylä. The efficiency of the procedure was about 20 %.

1997
M. Schlott M. Kutzner B. L. Gehman N. Reger F. J. Stadermann

Nodule formation on ITO sputtering targets was investigated by stop action in-situ video observation, 3D-SIMS, and EPMA. Major cause of nodule formation is particulates from the sputtering system, less important are particulate inclusions in the target material. A nodule growth mechanism and strategies to minimize nodule formation are proposed.

2003
K Tsutsumi M De Haan D Eisenberg J C Monsma Lodder

The critical condition for the giant magnetoresistance (GMR) effect has not yet been fully clarified. Reports on the MR ratio of C o / C u multilayers (MLs) disagree as to whether the interfacial roughness or crystallinity of the MLs is the cause. The film morphology is significantly affected by sputtering conditions such as sputtering gas and pressure. This paper presents some results of the m...

2015
Konstantinos D. Bakoglidis

The scope of this licentiate thesis is the investigation of carbon based thin films suitable for rolling components, especially roller bearings. Carbon and carbon nitride are materials with advantageous tribological properties and high resiliency. Such materials are required in order to withstand the demanding conditions of bearing operation, such as high loads and corrosive environments. A fun...

2004
T. Z. A. Zulkifli D. L. Rode L. H. Ouyang B. Abraham-Shrauner

Measurements were carried out on radio-frequency magnetron-sputtered amorphous and microcrystalline gallium-arsenide (GaAs) films, which were fabricated under various sputtering conditions such as annealing temperature (up to 450˚C), substrate temperature (up to 200˚C), sputtering pressure (up to 20 mTorr), rf sputtering power (up to 800 W), and hydrogen partial pressure (25% H 2 in a mixture w...

Journal: :international journal of nanoscience and nanotechnology 2011
r. azimirad m. kargarian o. akhavan a. z. moshfegh

electrical, structural and morphological properties of ni silicide films formed in ni(pt 4at.% )/si(100) and ni0.6si0.4(pt4at.% )/si(100) structures at various annealing temperatures ranging from 200 to 1000 oc were studied. the ni(pt) and ni0.6si0.4(pt) films with thickness of 15 and 25 nm were deposited by rf magnetron co-sputtering method, respectively.  the annealing process of the structur...

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