نتایج جستجو برای: sputtering atoms
تعداد نتایج: 67393 فیلتر نتایج به سال:
Using a Monte-Carlo model, we determine the sputtering yields for the upper atmosphere of Mars at three different epochs (the present, -2.5 Gyr ago and -3.5 Gyr ago). The carbon yield increases from 1 at 3.5 Gyr ago to 2 at present. These yields imply that sputtering is a major loss process for COz, especially during the early history of the solar system. Over the same period, the yield of oxyg...
Interconnects, once the technological backwater of integrated circuit technology, now dominate integrated circuit cost and performance. As much as 90 percent of the signal delay time in future integrated circuit designs will be due to the interconnection of semiconductor devices while the remaining 10 percent is due to transistor-related delay. This shifts the thrust of critical research toward...
The behavior of tungsten as plasma facing material in fusion environment is investigated using molecular dynamics simulation. Tungsten erosion and surface evolution is simulated during irradiation by carbon and deuterium ions. Non-cumulative pure carbon bombardment on crystal tungsten shows that substrate temperature does not affect carbon trapping rate, implantation depth, and tungsten sputter...
Reactive sputtering of aluminum oxide in a planar magnetron system is conducted with a mixture of O and Ar reacting with 2 and bombarding an aluminum target. The aluminum target is powered by a pulsed directed current (DC) bias which functions to discharge the accumulated ions on the insulating AlO film surface during the positive duty cycle and suppresses arc formation. x A seven-turn helical ...
The process of metal atoms sputtering during a corona discharge is considered. When an electron moves in medium at some velocity, charge screening occurs with delay space and time, which leads to the emergence wake potential. excited oscillations lead appearance additional forces. energy loss moving particle per unit path determined by work produced deceleration force that acts on from side pot...
Metal atoms often locate in energetically favorite close-packed planes, leading to a relatively high penetration barrier for other atoms. Naturally, the penetration would be much easier through non-close-packed planes, i.e. high-index planes. Hydrogen penetration from surface to the bulk (or reversely) across the packed planes is the key step for hydrogen diffusion, thus influences significantl...
Fe/Pt/Cu]18 multilayer films with different Cu thicknesses were prepared on thermally oxidized Si (111) substrates at room temperature using dcand rf-magnetron sputtering. The magnetic properties and microstructure of [Fe/Pt/Cu]18 multilayer films annealed at various temperatures have been investigated. Compared with pure [Fe/Pt]18 multilayer films low-temperature ordering and (001) orientation...
The paper considers the possibility of superconductivity setting in when the distance aB between molecules (atoms) is such that aF < aB < aW , where aF and aW are the equilibrium separations in Fermi metals and van der Waals insulators. The last has no band sructure. This is the binding energy region 40–60 kJ/mol. However, neither stretch of metals (”dilution” by insulators) nor compression of ...
We study the magnetic properties of Co nanoparticles, prepared by sputtering, with diameters ranging from 1 to 3.5 nm. The effective anisotropy, which determines the activation energy for the magnetization reversal, increases with decreasing particle’s size, showing the dominant role played by surface atoms. We find that the superparamagnetic blocking temperature and the coercive field are sign...
Abstract We performed a direct comparison of deuterium retention and release from tungsten in presence or absence oxygen impurities. A single crystal W(110) was used to prepare with four different surface states: its native oxide, atomically clean, covered half monolayer atoms, three fourths atoms. For D ion fluence 3 × 10 21 + m −2 implanted at 300 K, highest the lowest atoms intermediate for ...
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