نتایج جستجو برای: strained programming

تعداد نتایج: 334916  

Journal: :Science 2004
Benjamin Gilbert Feng Huang Hengzhong Zhang Glenn A Waychunas Jillian F Banfield

Nanoparticles may contain unusual forms of structural disorder that can substantially modify materials properties and thus cannot solely be considered as small pieces of bulk material. We have developed a method to quantify intermediate-range order in 3.4-nanometer-diameter zinc sulfide nanoparticles and show that structural coherence is lost over distances beyond 2 nanometers. The zinc-sulfur ...

2013
Congo Tak-Shing Ching Yueh-Chi Chen Li-Hua Lu Peiyuan F. Hsieh Chin-Sung Hsiao Tai-Ping Sun Hsiu-Li Shieh Kang-Ming Chang

OBJECTIVES This study aims to investigate the electrical properties of lumbar paraspinal muscles (LPM) of patients with acute lower back pain (LBP) and to study a new approach, namely Electrical Impedance Myography (EIM), for reliable, low-cost, non-invasive, and real-time assessment of muscle-strained acute LBP. DESIGN Patients with muscle-strained acute LBP (n = 30) are compared to a health...

2012
V. Fathipour M. A. Malakootian S. Fathipour M. Fathipour

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and...

1999
M. H. Moloney J. Hegarty P. Demeester

The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% ‘and 15%. Very low saturation densities, as low as 0.82X 1017 cmm3...

2008
Young-Kyu Kim Soon-Yeol Park Taeyoung Won

In this paper, we present our ab-initio study on energy configurations, minimum energy path (MEP), and migration energy for neutral indium diffusion in a uniaxial and biaxial tensile strained {100} silicon layer. Our abinitio calculation of the electronic structure allowed us to figure out transient atomistic configurations during the indium diffusion in strained silicon. We found that the lowe...

2011
Sergey V. Dmitriev Julia A. Baimova Alexander V. Savin Yuri S. Kivshar

We study the dispersion characteristics of strained graphene using many-body interatomic potentials and find: (i) borders of the structural stability of a flat graphene in the three-dimensional space of the strain components (exx,eyy,exy); (ii) sound velocities of strained graphene; and (iii) phonon density of states (DOS) of strained graphene. The border of structural stability of flat graphen...

2001
Marvin R. Goldfried Barry E. Wolfe

Although the gap between psychotherapy practice and research has been present for some time, recent pressures for accountability from outside the system--managed health care and biological psychiatry--necessitate that we take steps to close this gap. One such step has been for psychotherapy researchers to specify a list of empirically validated therapies. However, as researchers who also have a...

2016
Muhammad Imran Afzal Yong Tak Lee

Von Neumann and Wigner theorized the bounding and anti-crossing of eigenstates. Experiments have demonstrated that owing to anti-crossing and similar radiation rates, the graphene-like resonance of inhomogeneously strained photonic eigenstates can generate a pseudomagnetic field, bandgaps and Landau levels, whereas exponential or dissimilar rates induce non-Hermicity. Here, we experimentally de...

2012
Fatemeh Karimi Morteza Fathipour Hamdam Ghanatian Vala Fathipour

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility ...

2000
KRISTEN A. FICHTHORN MATTHIAS SCHEFFLER

When two or more atoms bind to a solid surface, the substrate can mediate an interaction between them. In this paper, we use densityfunctional theory to quantify the substrate-mediated pair interaction between two adatoms on a compressively strained Ag(111) surface and on unstrained Ag(111). On the strained surface, the elastic interaction is significant over the short range and leads to a net ...

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