نتایج جستجو برای: stressing

تعداد نتایج: 3603  

Journal: :Transactions of the Japan Society of Mechanical Engineers 1966

2000
James M. Raymo Yu Xie

Using data from a 1992 nationally representative survey of the elderly in urban China, this study examines the impact of political and economic reforms on income stratification. Drawing upon the existing literature on the differential impact of market reforms in socialist states, we develop and test three hypotheses: one stressing the increasing importance of returns to human capital, one stres...

2016
Ahmed M. Eltohamy

In this paper, an experimental and numerical study was adopted to investigate the effect geogrid soil reinforcement prestressing on the pressure settlement relation of sand bed supporting a strip foundation. The studied parameters include foundation depth and pre-stress ratio for the cases of one and two pre-stressed reinforcement layers. The study reflected that pre-stressing of soil reinforce...

2013
Shih-kang Lin Chao-kuei Yeh Wei Xie Yu-chen Liu Masahiro Yoshimura

Soldering is an ancient process, having been developed 5000 years ago. It remains a crucial process with many modern applications. In electronic devices, electric currents pass through solder joints. A new physical phenomenon--the supersaturation of solders under high electric currents--has recently been observed. It involves (1) un-expected supersaturation of the solder matrix phase, and (2) t...

1998
T. Danelle Au Kelvin Khoo

The generation of additional interface traps in the pinch-off region and the threshold voltage shift due to hotelectron stressing have been shown to cause 1-3 orders of magnitude increase in the flicker noise density. This flicker noise “overshoot” can easily degrade the performance/resolution of analog circuits by 6-18dB. An improved flicker noise model which is capable of accurately predictin...

2007
Joel Molina Kiichi Tachi Kuniyuki Kakushima Parhat Ahmet Kazuo Tsutsui Nobuyuki Sugii Takeo Hattori Hiroshi Iwai

In this paper, we report the effects of a N2 postmetallization annealing PMA on the reliability and charge-trapping characteristics of tungsten/La2O3/silicon structures. The samples are stressed with a constant-voltage stressing CVS with substrate injection. After the stressing we found that the flatband voltage VFB of the samples positively shifts, indicating a net negative charge trapped in t...

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