A new miniature interferometer has recently been developed for monitoring the changes of film thickness and refractive index, wherein a semiconductor laser and a photodiode detector are integrated to form a laser/detector hybrid. The laser light is collimated by a lens. When the laser light hits a film, it is reflected twice by the two interfaces between the film and the surrounding mediums. Th...

A fluorenone based alternating copolymer () with a furan based fused aromatic moiety has been designed and synthesized. exhibits a small band gap with a lower HOMO value. Testing this polymer semiconductor as the active layer in organic thin-film transistors results in hole mobilities as high as 0.15 cm(2) V(-1) s(-1) in air.

CdTe thin films with 2.8 µm thickness were deposited by electron beam evaporation method. X-ray diffraction, scanning electron microscopy, UV-Vis-NIR spectroscopy and atomic force microscopy (AFM) were used to characterize the films. The results of AFM analysis revealed that the CdTe films have uniform surface. CdTe thin films were heat-treated by SnCl2 solution. Structural analysis using XRD s...

Drastic cost reduction of phased-arrays will require a shift in design strategy. The emphasis must be on removing expensive active components, not developing more highly integrated components or exotic packaging techniques. The phase shifter circuit—an essential active component—is the primary obstacle in decreasing the cost and number of active components in a phased-array. The problem is mult...

Figure 1. a, Schematic of the “solution-shearing” printing method (inset shows chemical structure of TIPS-pentacene). b–d, Optical micrographs (cross-polarized) of solutionsheared TIPS-pentacene thin films, fabricated at different printing speeds. The printing speed and the electrical performance of the films in thin film transistor devices are listed below each of the images. Copyright Nature ...

Semiconductor processing in manufacturing must be fast and highly accurate in the measuring of the surface profile of soft thin films such as photoresist. Since photoresist surface is very smooth and deformable, a device to measure is required that will measure vertical direction with a nanometer resolution in height and not damage the film during the measurement. To do this, we developed an ap...

Nanocrystalline cadmium sulfide thin films as antireflection materials for solar cells have been prepared by a new chemical solution deposition route in an aqueous medium at 50 °C. as-deposited thin films were studied using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and optical absorption spectra. X-ray diffraction data indicated the formation of hexagonal na...

A novel tetraphenylquinodimethane based on electron-deficient 4-phenylquinoline oligomer displayed an unusually low ionization potential and was used as a p-channel semiconductor in thin-film transistors and as an emitter to achieve very bright and high efficiency green light-emitting diodes.

The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous semiconductors. Crystalline β-Ga2O3 is known as a transparent conducting oxide with an ultra-wide bandgap of ~ 4.9 eV, but amorphous (a-) Ga2Ox is just an electrical insulator because the combination of an ultra-wide ban...

Soft, conformable electrical contacts provide efficient, noninvasive probes for the transport properties of chemically and mechanically fragile, ultrathin organic semiconducting films. When combined with high-resolution printing and lamination techniques, these soft contacts also form the basis of a powerful technique for fabricating flexible plastic circuits. In this approach, a thin elastomer...