Due to the increase of a variety of demands from downstream customers, the enterprises are necessary to expand more capacity of their factories by way of adding more plants or outsourcing. Many enterprises encounter great difficulties in production planning because manufacturing environments have changed from traditional single-plant to current multi-plants. Therefore, the company may possess m...

Characteristics of ALD-ZnO Thin Film Transistor In article number 2101953, Jun Yang, Amin Bahrami, Kornelius Nielsch, and co-workers report that during atomic layer deposition (ALD)-ZnO process, H2O2 provides an oxygen-rich environment inducing less oxygen vacancies into the ZnO thin film. After applying a bias stress 10 V for 3600 s, threshold voltage shift H2O2-ZnO film transistor is 0.13 V.

Articles you may be interested in Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment Appl. Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method Appl. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers, -dihexylquarterthiophene (DH-4T) and -dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtain...

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (I...

In this work, we present a novel organic complementary comparator constructed of Pentacene P-channel and Fullerene N-channel thin-film transistors. These organic semiconductor materials are chosen due to their popularity and high effect-field mobility. We fabricated two new organic fieldeffect transistor types, then we measured key parameters in order to create models being used in integrated c...

In this paper, we investigate the noise and large-signal behavior of a feedback amplifier in multilayer thin-film MCMD technology. A small-signal equivalent model (including noise) of the active devive, a thin-film MHEMT, is identified. A large-signal state-space transistor model is built from timedomain data. These models are implemented in a circuit simulator and can accurately predict the no...