نتایج جستجو برای: total dose

تعداد نتایج: 1071349  

Journal: :Internal medicine journal 2009
A Manoharan R Ramakrishna B Pereira

The rate of infusion reactions to total-dose intravenous iron polymaltose is very low, but the frequency and severity of adverse reactions following the infusion are unknown. In 50 consecutive patients, adverse reactions developed up to 2 days after the infusion in 26% and lasted 1-8 days (median 4). Severe systemic reactions occurred in 8%. Patients should be warned of the chance of delayed re...

2000
J. Bogaerts B. Dierickx

Co irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors (APS) that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage effects such as field leakage currents and dark current increase are discussed in detail. Two different approaches to overcome these problems are considere...

1999
A. H. Johnston

High-speed and high-resolution analog-to-digital converters (ADC) are critical devices for space electronic systems. Analog Devices’s bipolar technology 12-bit A/D converter, AD574A, was proven to withstand up to 100 krad(Si) [1], but excessive power consumption limits its applications in many new high-speed and low-power system designs. Several other commercial 12-bit successive approximation ...

2011
Marie‐Claude Lavallée Sylviane Aubin Marie Larochelle Isabelle Vallières Luc Beaulieu

One major objective of total body irradiation (TBI) treatments is to deliver a uniform dose in the entire body of the patient. Looking at 3D dose distributions for constant speed (CstSpeed) and variable speed (VarSpeed) translating couch TBI treatments, dose uniformity and the effect of body heterogeneities were evaluated. This study was based on retrospective dose calculations of 10 patients t...

2000
V. Ferlet-Cavrois

The worst ease bias during total dose irradiation of partially depleted SOI transistors from two technologies is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

2010
Cher Xuan Zhang Daniel M. Fleetwood Ronald D. Schrimpf Dan Fleetwood Ron Schrimpf

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