We propose a high mobility superconductor gate nMOSFET using undoped Si as the substrate. We have studied superconducting NbN gate nMOSFETs fabricated on p-type Si, undoped Si and n-type Si substrate, respectively. The nMOSFETs on undoped Si and n-type Si have operated properly at 4.2 K. The transconductance of nMOSFETs on undoped Si substrate is higher than that of nMOSFET on p-type Si. The di...

This paper presents the analysis of hybrid cascode compensation scheme, merged Ahuja and improved Ahuja style compensation methods, which is used in two-stage CMOS operational transconductance amplifiers (OTAs). The open loop signal transfer function is derived to allow the accurate estimation of the poles and zeros. This analytical approach shows that the non-dominant poles and zeros of the hy...

Experimental results from GaN-based high electron mobility transistors (HEMTs) show a pronounced decrease of the transconductance gm at higher gate bias, due to increasing source-gate and gate-drain resistances. In this work we show through simulations that the electric field distribution and the resulting carrier velocity quasi-saturation are the main source for the transconductance collapse, ...

The paper presents a new voltage-mode universal filter using a differential voltage current conveyor transconductance amplifier (DVCCTA). It has three inputs and single output. The proposed circuit can simultaneously realize low-pass, band-pass, and high pass, band reject and all pass filter functions without changing the circuit topology and passive elements. The circuit exhibits a good freque...

− A universal and robust circuit technique to maintain a constant transconductance in rail-to-rail amplifiers, based on an input stage made up of parallelconnected complementary differential pairs, is introduced in this paper. The principle of operation consists of comparing the total transconductance with a reference value and then, appropriated tail currents are generated for the complementar...

We studied submicrometer (LG = 0.15−0.25 μm) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of IDS,max = 1.5 A/mm and a record peak extrinsic transcond...

This letter presents a self-aligned InGaAs quantumwell MOSFET with a transconductance, gm,max, of 3.45 mS/μm at Vds = 0.5 V. This is a record value among III–V FETs of any kind, including MOSFETs and HEMTs, and represents an improvement of over 10% with respect to the previous record on planar devices. This result was achieved by redesigning the access regions that link the intrinsic device to ...

The Operational Transconductance Amplifier is a basic building blocks found in many analog circuits such as data converter’s (ADC& DAC) and Gm-c filters. The OTA is an amplifier whose differential input voltage produces an output current .Thus ,it is a voltage controlled current source(VCCS) whereas the Op-amp are voltage controlled voltage source(VCVS). There is usually an additional input for...

This paper presents a capacitor-less low drop-out (LDO) regulator with current mode transconductance amplifier & slew-rate enhancement circuit. The proposed current mode transconductance amplifier as error amplifier improves the slew rate & slewrate enhancement circuit further senses the transient voltage at the output of the LDO to increase the bias current of the error amplifier for a short d...