Noise performance of the switched emitter follower (SEF) track and hold (TH) amplifier is analyzed. Simulations based on a commercial available 130 nm SiGe HBT process technology are implemented with the SpectreRF circuit simulator. It is shown that both the thermal noise and shot noise contribute to the TH amplifier (THA) at ultra high frequency. Simulations also locate the major noise contrib...

By Aalay Kapadia in Electrical Engineering and Electronic Engineering. The circuit topology we used for this project is a cascode LNA with inductive source. Typical parameters are maximum transducer gain, output power , low noise, circuit stability. Here a LNA is designed to obtain an optimum gain with minimum.

This paper describes a symmetric ultra lowvoltage (ULV) rail-to-rail CMOS amplifiers using floating gates. Simulation of a compact differential ULV amplifier is presented.

In this paper, the significance of linearity for UWB front-end circuit is discussed. The effects of strong narrow band interferer on UWB signal are investigated. Wideband linearization techniques for UWB LNA are first proposed in this work. A high linearity UWB LNA is designed in TSMC 0.18μ CMOS process The simulation results show that the designed LNA exhibits very high IIP3 (6.9~13.8 dBm) whi...

This paper presents a fully differential dualended ultralow-voltage (ULV) FGUVMOS operational transconductance amplifier (FGUVMOS-OTA), and a Gm-C filter where the FGUVMOS-OTA is used. The OTA has no internal nodes, rail-to-rail operation and dynamic load. The cut-off frequency of the Gm-C filter is tunable over more than 5 decades. The circuits may be operated with supply voltages down to 200mV.

In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with -boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are achieved by using of series and shunt peaking techniques. Simulated in .13 um Cmos technology, the proposed LNA achieved 2.38-3.4d...

In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with gm-boosted and noise-cancelling techniques is presented. In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are achieved by using of series and shunt peaking techniques. Simulated in .13 um Cmos technology, the proposed LNA achieved 2.38-3....

In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...