A simple method for transistor DC parameter extraction is presented, where the self-heating of the transistor is taken into account. The thermal behaviour of the transistor is modelled using a single thermal resistance, whose value is extracted simultaneously with the electrical parameters. When pulsed measurements are performed the usage of the thermal resistance, as an effective thermal resis...

Prevailing CMOS design practice has been very conservative with regard t o choice of transistor threshold voltage, so as t o avoid the difficult problems of threshold variations and high leakage currclnts. I t is becoming necessary t o scale threshold voltages more aggress~vely in order t o obtain further power reduction, performance improven~ent, and integration density. Substantial leakage re...

We describe a timing analysis algorithm which can achieve the efficiency of RC tree analysis while retaining much of the generality of Asymptotic Waveform Estimation. RC tree analysis from switch level simulation is generalized to handle piecewise linear transistor models, non tree topologies, floating capacitors, and feedback. For simple switch level models the complexity is O(n). The algorith...

the transformation of biochemical information into a physical or chemical signal is the basic idea behind a biosensor. the efficient detection of charged biomolecules by biosensor with appropriate device has caught tremendous research interest in the present decade. the present work is related to the simulation study of the performance of a functionalized surface of a biologically sensitive fie...

Low voltage (LV) analog circuit design techniques are addressed in this tutorial. In particular, (i) technology considerations; (ii) transistor model capable to provide performance and power tradeoffs; (iii) low voltage implementation techniques capable to reduce the power supply requirements, such as bulk-driven, floating-gate, and self-cascode MOSFETs; (iv) basic LV building blocks; (v) multi...

Improved transport models for quasi-3D circuit-based simulation (Q3DSim) of four-layer devices such as thyristors and transient overvoltage protectors (TOVPs) are presented. Q3DSim is an attractive alternative to full 3D transport equations based simulations (3D-TES), since it is much faster and requires less computer power. In Q3DSim, the thyristor is divided into four-layered square prisms, a...

A new subthreshold leakage model is proposed in order to improve the static power estimation in general CMOS complex gates. Series-parallel transistor arrangements with more than two logic depth, as well as non-seriesparallel off-switch networks are covered by such analytical modeling. The occurrence of on-switches in off-networks, also ignored by previous works, is considered in the proposed a...

Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a ...

The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a p...

This paper presents the modeling and simulation of a low voltage pentacene organic field effect transistor (OFET), which is based on experimental data using an integrated finite element and artificial neural networks (ANN) approach. We present a model of organic field effect transistor based on neural network, this approach allows an easy way to model devices without acquiring a deep knowledge ...