The purpose of this article is to present, for the chemical vapour deposition process, mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected resu...

X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VB-PES) were used to elucidate the electronic and mechanical properties of diamond-like carbon (DLC) thin films deposited by the plasma-enhanced chemical vapour deposition method at various bias voltages (V(b)) using a C(2)H(2) vapour precursor in an Ar(+) atmosphere. The increase of V(b) is found to incre...

In this paper we present results on phosphorous-doped c-Si:H by catalytic chemical vapour deposition in a reactor which internal arrangement does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivit...

Recent progress on the synthesis and characterization of semiconductor nanowire heterostructures is reviewed. We describe a general method for heterostructure synthesis based on chemical vapour deposition and the vapour-liquid-solid growth of crystalline semiconducting nanowires. We then examine examples of nanowire heterostructures for which physical properties have been measured, considering ...

Thin alumina films were deposited on stainless steel, type AISI 304. The deposition process was carried out in nitrogen with low partial pressures of water (0-2.6 x 10 -2 kPa (0-0.20 mmHg)) by metal-organic chemical vapour deposition (MOCVD) with aluminium-tri-sec-butoxide (ATSB) as the precursor. Also results are presented regarding the alumina deposition in the presence of small amounts of 2-...

By means of electrochemical vapour deposition (E VD), it is possible to grow thin (0.5-j pm), dense airconia/yttria layers on porous ceramic substrates. Kinetics of the EVD process, morphology and oxygen permeation properties of the grown layers are investigated. Very thin (0,.5 t-an) layers are grown at relatively low temperatures (700 SOO’C). Water vapour as reactant enhances the surface reac...