نتایج جستجو برای: vcsel

تعداد نتایج: 808  

2007
MICHAEL C.Y. HUANG Y. ZHOU CONNIE J. CHANG-HASNAIN

Semiconductor diode lasers can be used in a variety of applications including telecommunications, displays, solid-state lighting, sensing and printing. Among them, vertical-cavity surface-emitting lasers (VCSELs) are particularly promising. Because they emit light normal to the constituent wafer surface, it is possible to extract light more efficiently and to fabricate two-dimensional device ar...

2009
Bram Van Hoe Deben Lamon Peter Van Daele Geert Van Steenberge

This paper describes the fabrication of a novel type of pressure sensor based on optical feedback in a Vertical Cavity Surface Emitting Laser (VCSEL). The detection mechanism of the sensor is based on a displacement measurement through self-mixing interferometry in the laser cavity. The use of unpackaged VCSELs enables the embedding in thin flexible optical foils which results in an integrated ...

Journal: :Optics express 2010
Vadim Karagodsky Bala Pesala Christopher Chase Werner Hofmann Fumio Koyama Connie J Chang-Hasnain

We propose a novel design for multi-wavelength arrays of vertical cavity surface-emitting lasers (VCSELs) using high-contrast gratings (HCGs) as top mirrors. A range of VCSEL cavity wavelengths in excess of 100 nm is predicted by modifying only the period and duty-cycle of the high-contrast gratings, while leaving the epitaxial layer thickness unchanged. VCSEL arrays fabricated with this novel ...

2017
K. K. Gan H. P. Kagan R. D. Kass J. Moore D. S. Smith P. Buchholz S. Heidbrink M. Vogt M. Ziolkowski

We have designed and fabricated a compact array-based optical engine for transmitting data at 10 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modul...

2008
W. Chow G. R. Hadley W. W. Chow

A vertical cavity surface emitting laser (VCSEL) is a diode laser whose optical cavity is formed by growing or depositing DBR mirror stacks that sandwich an active gain region. The resulting short cavity supports lasing into a single longitudinal mode normal to the wafer, making these devices ideal for a multitude of applications, ranging fiom high-speed communication to high-power sources (fro...

2012
M. Linnik A. Christou

The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows ...

Journal: :Photonics 2023

Vertical-cavity surface-emitting lasers (VCSELs) have been widely used in consumer electronics, light detection and ranging, optical interconnects, atomic sensors, so on. In this paper, a VCSEL with the surface metastructure like one-dimensional high-contrast grating (HCG), based on HCG-DBR vertical cavity, was first designed fabricated. The polarization characteristic of HCG-VCSEL were experim...

2011
Krzysztof Szczerba Petter Westbergh Johnny Karout Johan Gustavsson Åsa Haglund Magnus Karlsson Peter Andrekson Erik Agrell Anders Larsson

We present high speed real time, error free 4-PAM transmission for short range optical links based on a VCSEL operating at 850 nm, a multimode fibre and a simple intensity detector. Transmission speeds of 25 Gbps and 30 Gbps are demonstrated, and the maximum fibre reaches were 300 m and 200 m, respectively. The 4-PAM is also compared with OOK transmission at 25 Gbps, and we find that at this bi...

Journal: :Laser Technik Journal 2014

Journal: :Optics letters 2001
J Kaiser C Degen W Elsässer

We discuss the polarization-resolved intensity noise characteristics of a transverse single-mode vertical-cavity surface-emitting laser (VCSEL). Measurements by a sensitivity-enhanced lock-in amplifier detection scheme yield only an imperfect anticorrelation between the strong and the weak orthogonally polarized fundamental modes. Yet the total emission shows amplitude squeezing of 0.4 dB below...

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