A solid-source molecular beam epitaxy has been used to grow Al-free InGaP/GaAs/InGaAs in-plane side emitting laser ~IPSELs! devices on foundry available GaAs integrated circuits ~IC! chips with integrated metal–semiconductor–metal photodetectors. The GaAs IC chips were cleaned at low temperature ~470 °C! by monoatomic hydrogen prior to epitaxy. Br2 reactive ion etching was used after growth to ...

Radicals CF (x=1-3) are formed in the upper atmosphere by photolysis of fluorocarbons the bulk of which are generated in the plasma industry. Fluorocarbon plasmas are used in plasma etching technology and surface modification of materials. Many of the processes that occur in these plasmas are poorly characterized and understood, providing a significant roadblock for the construction of reliable...

In high aspect ratio HAR plasma etching of holes and trenches in dielectrics, sporadic twisting is often observed. Twisting is the randomly occurring divergence of a hole or trench from the vertical. Many causes have been proposed for twisting, one of which is stochastic charging. As feature sizes shrink, the fluxes of plasma particles, and ions in particular, into the feature become statistica...

Polarisation control is demonstrated in circular gainguided top-surface emitting vertical cavity lasers by etching a narrow trench near the cavity aperture. An optimum etch depth exists for which all modes are pinned in a single polarisation. The etch orientation determines the dominant polarisation state of emission by modifying the spontaneous emission coupling into each polarisation state. P...

In this paper, triple band rectangular microstrip antenna with two vertical rhombus shaped slot (TBRMA2VRS) is designed and developed for S and C band frequency applications. The triple bands are obtained by etching two rhombus slots on the patch surface. The impedance bandwidth of secondary band is enhanced from 2.06% to8.54% by replacing the two rhombus slots. The radiation patterns measured ...

The development of an optimized recipe for the processing of a MQW AlGaInN based oxide stripe laser diode grown on c-plane sapphire has been investigated. Two processing sequences involving Reactive Ion Etching (RIE) were compared. The first relied on the use of SiO2 as a dry etch-mask, whereas in the second, the use of nickel was utilized. The critical step of smooth and vertical mirror format...

We have studied the blue shift in photoluminescence emission energy of pseudomorphic InGaAs/ GaAs quantum wells grown on patterned ~001! GaAs substrates with grooves and trenches having vertical sidewalls made by dry etching. Dependence of the blue shift, which can be as large as 51 meV, on the direction, feature size, and the etch depth of the patterns as well as the thickness of the buffer la...

The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 μm. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibr...

Selective Ga + ion implantation and miring by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with a ~ 30 nm membrane thickness are made by controlled selective underetching between unexposed and exposed areas. Ultrahigh-frequency cantilever beams have been made with resonances in the tens of MHz range...